Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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DREM: Infinite etch selectivity and optimized scallop size distribution with conventional photoresists in an adapted multiplexed Bosch DRIE processChang, Bingdong ; Leussink, Pele ; Jensen, Flemming ; Hübner, Jörg ; Jansen, HenriMicroelectronic engineering, 2018-05, Vol.191, p.77-83 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Hybrid lithography based fabrication of 3D patterns by deep reactive ion etchingJenni, Laura Vera ; Kumar, Lalit ; Hierold, ChristoferMicroelectronic engineering, 2019-03, Vol.209, p.10-15 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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Towards sub-micrometer high aspect ratio X-ray gratings by atomic layer deposition of iridiumVila-Comamala, Joan ; Romano, Lucia ; Guzenko, Vitaliy ; Kagias, Matias ; Stampanoni, Marco ; Jefimovs, KonstantinsMicroelectronic engineering, 2018-05, Vol.192, p.19-24 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Effect of isopropanol on gold assisted chemical etching of silicon microstructuresRomano, L. ; Vila-Comamala, J. ; Jefimovs, K. ; Stampanoni, M.Microelectronic engineering, 2017-06, Vol.177, p.59-65 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Reactive ion etching of Ge-Sb-Se ternary chalcogenide glass films in fluorine plasmaXiong, Hao ; Shi, Yunfan ; Wang, ZheyaoMicroelectronic engineering, 2020-03, Vol.225, p.111259, Article 111259 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Characterization of AlN and AlScN film ICP etching for micro/nano fabricationLuo, Zhifang ; Shao, Shuai ; Wu, TaoMicroelectronic engineering, 2021-04, Vol.242-243, p.111530, Article 111530 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masksTseng, Li-Ting ; Kazazis, Dimitrios ; Wang, Xiaolong ; Popescu, Carmen M. ; Robinson, Alex P.G. ; Ekinci, YasinMicroelectronic engineering, 2019-04, Vol.210, p.8-13 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Influence of the hard masks profiles on formation of nanometer Si scalloped fins arraysZhang, Qingzhu ; Tu, Hailing ; Yin, Huaxiang ; Wei, Feng ; Li, Junjie ; Meng, Lingkuan ; Zhang, Zhaohao ; Yan, Jiang ; Zhao, Hongbin ; Ma, Tongda ; Zhou, Zhangyu ; Fan, Yanyan ; Du, JunMicroelectronic engineering, 2018-10, Vol.198, p.48-54 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etchingLenk, Claudia ; Hofmann, Martin ; Lenk, Steve ; Kaestner, Marcus ; Ivanov, Tzvetan ; Krivoshapkina, Yana ; Nechepurenko, Diana ; Volland, Burkhard ; Holz, Mathias ; Ahmad, Ahmad ; Reum, Alexander ; Wang, Chen ; Jones, Mervyn ; Durrani, Zahid ; Rangelow, Ivo W.Microelectronic engineering, 2018-05, Vol.192, p.77-82 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Combination of thermal scanning probe lithography and ion etching to fabricate 3D silicon nanopatterns with extremely smooth surfaceLisunova, Y. ; Brugger, J.Microelectronic engineering, 2018-06, Vol.193, p.23-27 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |