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Refinado por: Nome da Publicação: Journal Of Crystal Growth remover
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Mechanism study of photoluminescence peak shift of transparent (In,Ga)N nanowire films detached by acid solution
Mechanism study of photoluminescence peak shift of transparent (In,Ga)N nanowire films detached by acid solution
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Mechanism study of photoluminescence peak shift of transparent (In,Ga)N nanowire films detached by acid solution

Zhang, Jianya ; Xing, Zhiwei ; Wu, Dongmin ; Bian, Lifeng ; Zhao, Yukun ; Yang, Wenxian ; Wu, Yuanyuan ; Zhou, Min ; Jiang, Min ; Lu, Shulong

Journal of crystal growth, 2021-05, Vol.562, p.126066, Article 126066 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching
Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching
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Investigation of etching characteristics of HVPE-grown c-In2O3 layers by hydrogen-environment anisotropic thermal etching

Togashi, Rie ; Kasaba, Ryo ; Goto, Ken ; Kumagai, Yoshinao ; Kikuchi, Akihiko

Journal of crystal growth, 2021-12, Vol.575, p.126338, Article 126338 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method
Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method
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Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method

Ohba, Etsuko ; Kobayashi, Takumi ; Taishi, Toshinori ; Hoshikawa, Keigo

Journal of crystal growth, 2021-02, Vol.556, p.125990, Article 125990 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Cavity etching evolution on the A-plane of sapphire crystal in molten KOH etchant
Cavity etching evolution on the A-plane of sapphire crystal in molten KOH etchant
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Cavity etching evolution on the A-plane of sapphire crystal in molten KOH etchant

Zhang, Lunyong ; Yuan, Zhiyong ; Jiang, Sida ; Shen, Hongxian ; Cao, Fuyang ; Ning, Zhiliang ; Huang, Yongjiang ; Xing, Dawei ; Zuo, Hongbo ; Han, Jiecai ; Sun, Jianfei

Journal of crystal growth, 2020-12, Vol.552, p.125926, Article 125926 [Periódico revisado por pares]

Elsevier B.V

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5
Comparative study of etching high crystalline quality AlN and GaN
Comparative study of etching high crystalline quality AlN and GaN
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Comparative study of etching high crystalline quality AlN and GaN

Guo, W. ; Xie, J. ; Akouala, C. ; Mita, S. ; Rice, A. ; Tweedie, J. ; Bryan, I. ; Collazo, R. ; Sitar, Z.

Journal of crystal growth, 2013-03, Vol.366, p.20-25 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid
GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid
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GaN nanowire fabricated by selective wet-etching of GaN micro truncated-pyramid

Chen, Weijie ; Lin, Jiali ; Hu, Guoheng ; Han, Xiaobiao ; Liu, Minggang ; Yang, Yibin ; Wu, Zhisheng ; Liu, Yang ; Zhang, Baijun

Journal of crystal growth, 2015-09, Vol.426, p.168-172 [Periódico revisado por pares]

Elsevier B.V

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7
Surface passivation of silicon nanowires based metal nano-particle assisted chemical etching for photovoltaic applications
Surface passivation of silicon nanowires based metal nano-particle assisted chemical etching for photovoltaic applications
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Surface passivation of silicon nanowires based metal nano-particle assisted chemical etching for photovoltaic applications

Ben Rabha, Mohamed ; Khezami, Lotfi ; Jemai, Abdelbasset Bessadok ; Alhathlool, Raed ; Ajbar, Abdelhamid

Journal of crystal growth, 2017-03, Vol.462, p.35-40 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Measurement and evaluation of the defects in Cd^sub 1−x^Zn^sub x^Te materials by observing their etch pits in real time
Measurement and evaluation of the defects in Cd^sub 1−x^Zn^sub x^Te materials by observing their etch pits in real time
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Measurement and evaluation of the defects in Cd^sub 1−x^Zn^sub x^Te materials by observing their etch pits in real time

Yu, HX ; Yang, JR ; Zhang, JJ ; Xu, C ; Sun, SW ; Zhou, CH

Journal of crystal growth, 2019-01, Vol.506, p.1 [Periódico revisado por pares]

Amsterdam: Elsevier BV

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9
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning
Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning
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Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning

Kim, Honghyuk ; Choi, Jonathan ; Lingley, Zachary ; Brodie, Miles ; Sin, Yongkun ; Kuech, Thomas F. ; Gopalan, Padma ; Mawst, Luke J.

Journal of crystal growth, 2017-05, Vol.465, p.48-54 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Characterization of defects in Tb3Ga5O12 single crystals grown by the Czochralski method
Characterization of defects in Tb3Ga5O12 single crystals grown by the Czochralski method
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Characterization of defects in Tb3Ga5O12 single crystals grown by the Czochralski method

Watanabe, Miki ; Anzai, Yutaka ; Tanaka, Isao

Journal of crystal growth, 2024-05, Vol.634, Article 127687 [Periódico revisado por pares]

Elsevier B.V

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