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Refinado por: Nome da Publicação: Ieee Transactions On Electron Devices remover
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1
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution
Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution
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Unveiling Unintentional Fluorine Doping in TMDs During the Reactive Ion Etching: Root Cause Analysis, Physical Insights, and Solution

Hemanjaneyulu, Kuruva ; Meersha, Adil ; Kumar, Jeevesh ; Shrivastava, Mayank

IEEE transactions on electron devices, 2022-04, Vol.69 (4), p.1956-1963 [Periódico revisado por pares]

New York: IEEE

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2
Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques
Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques
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Fabrication of GeSn Nanowire MOSFETs by Utilizing Highly Selective Etching Techniques

Hong, Tzu-Chieh ; Lu, Wen-Hsiang ; Wang, Yeong-Her ; Li, Jiun-Yun ; Lee, Yao-Jen ; Chao, Tien-Sheng

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-6 [Periódico revisado por pares]

New York: IEEE

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3
Analysis of the Thickness of Multilayered Porous Silicon in the Cold Emission Property
Analysis of the Thickness of Multilayered Porous Silicon in the Cold Emission Property
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Analysis of the Thickness of Multilayered Porous Silicon in the Cold Emission Property

Li, He ; Sailei, Li ; Wei, Luo

IEEE transactions on electron devices, 2024-04, Vol.71 (4), p.1-6 [Periódico revisado por pares]

New York: IEEE

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4
A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory
A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory
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A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

Chien, Wei-Chih ; Yeh, Chiao-Wen ; Bruce, Robert L. ; Cheng, Huai-Yu ; Kuo, I. T. ; Yang, Chih-Hsiang ; Ray, A. ; Miyazoe, Hiroyuki ; Kim, W. ; Carta, Fabio ; Lai, Erh-Kun ; BrightSky, Matthew J. ; Lung, Hsiang-Lan

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5172-5179 [Periódico revisado por pares]

New York: IEEE

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5
Significant Off-State Leakage Reduction for n-FinFET by Self-Adaptive TiN Etching
Significant Off-State Leakage Reduction for n-FinFET by Self-Adaptive TiN Etching
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Significant Off-State Leakage Reduction for n-FinFET by Self-Adaptive TiN Etching

Huang, Tao ; Cai, Han-Lun ; He, Song ; Li, Zhao-Yang ; Jiang, Yu-Long

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-5 [Periódico revisado por pares]

New York: IEEE

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6
Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon
Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon
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Optimization of Ohmic Contact for AlGaN/GaN HEMT on Low-Resistivity Silicon

Benakaprasad, Bhavana ; Eblabla, Abdalla M. ; Li, Xu ; Crawford, Kevin G. ; Elgaid, Khaled

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.863-868 [Periódico revisado por pares]

New York: IEEE

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7
High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique
High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique
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High Uniformity Normally-OFF p-GaN Gate HEMT Using Self-Terminated Digital Etching Technique

Chiu, Hsien-Chin ; Chang, Yi-Sheng ; Li, Bo-Hong ; Wang, Hsiang-Chun ; Kao, Hsuan-Ling ; Chien, Feng-Tso ; Hu, Chih-Wei ; Xuan, Rong

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4820-4825 [Periódico revisado por pares]

New York: IEEE

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8
Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters
Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters
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Fabrication of Vertically Stacked Nanosheet Junctionless Field-Effect Transistors and Applications for the CMOS and CFET Inverters

Sung, Po-Jung ; Chang, Shu-Wei ; Kao, Kuo-Hsing ; Wu, Chien-Ting ; Su, Chun-Jung ; Cho, Ta-Chun ; Hsueh, Fu-Kuo ; Lee, Wen-Hsi ; Lee, Yao-Jen ; Chao, Tien-Sheng

IEEE transactions on electron devices, 2020-09, Vol.67 (9), p.3504-3509 [Periódico revisado por pares]

New York: IEEE

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9
Fabrication and Sensitivity Analysis of Guided Beam Piezoelectric Energy Harvester
Fabrication and Sensitivity Analysis of Guided Beam Piezoelectric Energy Harvester
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Fabrication and Sensitivity Analysis of Guided Beam Piezoelectric Energy Harvester

Saxena, Shanky ; Sharma, Ritu ; Pant, B. D.

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5123-5129 [Periódico revisado por pares]

New York: IEEE

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10
Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF } Plasma Treatment
Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF } Plasma Treatment
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Improvement of Performance of Back Channel Etching InGaZnO Thin-Film Transistors by CF } Plasma Treatment

Wang, Chen ; Peng, Cong ; Wen, Pan ; Xu, Meng ; Chen, Longlong ; Li, Xifeng ; Zhang, Jianhua

IEEE transactions on electron devices, 2023-02, p.1-5 [Periódico revisado por pares]

IEEE

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