Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Characteristics of high aspect ratio SiO2 etching using C4H2F6 isomersLee, Hye Joo ; Tak, Hyun Woo ; Kim, Seong Bae ; Kim, Seul Ki ; Park, Tae Hyun ; Kim, Ji Yeun ; Sung, Dain ; Lee, Wonseok ; Lee, Seung Bae ; Kim, Keunsuk ; Cho, Byeong Ok ; Kim, Young Lea ; Lee, Ki Chan ; Kim, Dong Woo ; Yeom, Geun YoungApplied surface science, 2023-12, Vol.639, p.158190, Article 158190 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Carbon vacancy-induced enhancement of the visible light-driven photocatalytic oxidation of NO over g-C 3 N 4 nanosheetsLi, Yuhan ; Ho, Wingkei ; Lv, Kangle ; Zhu, Bicheng ; Lee, Shun ChengApplied surface science, 2018-02, Vol.430, p.380-389 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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Plasma atomic layer etching of molybdenum with surface fluorinationKim, Yongjae ; Kang, Hojin ; Ha, Heeju ; Kim, Changkoo ; Cho, Sungmin ; Chae, HeeyeopApplied surface science, 2023-08, Vol.627, p.157309, Article 157309 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Physiochemical etching characteristics and surface analysis of Y2O3-MgO nanocomposite under different CF4/Ar/O2 plasma atmospheresMa, Ho Jin ; Park, Young-Jo ; Kim, Mi-Ju ; Kim, Ha-Neul ; Ko, Jae-Woong ; Lee, Jae-Wook ; Kim, Jung-Hyung ; Lee, Hyo-ChangApplied surface science, 2023-12, Vol.641, p.158483, Article 158483 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6Yoshie, Taito ; Ishikawa, Kenji ; Nguyen, Thi-Thuy-Nga ; Hsiao, Shih-Nan ; Tsutsumi, Takayoshi ; Sekine, Makoto ; Hori, MasaruApplied surface science, 2023-11, Vol.638, p.157981, Article 157981 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Selective etching of SiN against SiO2 and poly-Si films in hydrofluoroethane chemistry with a mixture of CH2FCHF2, O2, and ArHsiao, Shih-Nan ; Ishikawa, Kenji ; Hayashi, Toshio ; Ni, Jiwei ; Tsutsumi, Takayoshi ; Sekine, Makoto ; Hori, MasaruApplied surface science, 2021-03, Vol.541, p.148439, Article 148439 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Effects of H2 pre-etching on BN seed morphology and induced graphene synthesis on Cu substrate: A theoretical studySun, Xiucai ; Luo, Xingyun ; Li, Yanlu ; Yu, Fapeng ; Zhao, Xian ; Yang, LeiApplied surface science, 2021-01, Vol.537, p.148093, Article 148093 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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A controllable top-down etching and in-situ oxidizing strategy: metal-organic frameworks derived α-Co/Ni(OH)2@Co3O4 hollow nanocages for enhanced supercapacitor performanceBao, Yuxiang ; Deng, Ying ; Wang, Moze ; Xiao, Zhenyu ; Wang, Minghui ; Fu, Yunlei ; Guo, Ziyang ; Yang, Yu ; Wang, LeiApplied surface science, 2020-02, Vol.504, p.144395, Article 144395 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Wafer-scale vertical GaN nanorod arrays with nonpolar facets using TMAH wet etchingRyu, Hyesu ; Choi, Hak-Jong ; Kulkarni, Mandar ; Rho, Hokyun ; Lim, Hyungjun ; Ryu, Sang-Wan ; Ha, Jun-Seok ; Lee, Sang HyunApplied surface science, 2024-07, Vol.661, Article 160040 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Effect of hydrofluorocarbon structure of C3H2F6 isomers on high aspect ratio etching of silicon oxideTak, Hyun Woo ; Lee, Hye Joo ; Wen, Long ; Kang, Byung Jin ; Sung, Dain ; Bae, Jeong Woon ; Kim, Dong Woo ; Lee, Wonseok ; Lee, Seung Bae ; Kim, Keunsuk ; Cho, Byeong Ok ; Kim, Young Lea ; Song, Han Dock ; Yeom, Geun YoungApplied surface science, 2022-10, Vol.600, p.154050, Article 154050 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |