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Refinado por: Nome da Publicação: Microelectronic Engineering remover assunto: Science & Technology remover
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Hybrid lithography based fabrication of 3D patterns by deep reactive ion etching
Hybrid lithography based fabrication of 3D patterns by deep reactive ion etching
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Hybrid lithography based fabrication of 3D patterns by deep reactive ion etching

Jenni, Laura Vera ; Kumar, Lalit ; Hierold, Christofer

Microelectronic engineering, 2019-03, Vol.209, p.10-15 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Towards sub-micrometer high aspect ratio X-ray gratings by atomic layer deposition of iridium
Towards sub-micrometer high aspect ratio X-ray gratings by atomic layer deposition of iridium
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Towards sub-micrometer high aspect ratio X-ray gratings by atomic layer deposition of iridium

Vila-Comamala, Joan ; Romano, Lucia ; Guzenko, Vitaliy ; Kagias, Matias ; Stampanoni, Marco ; Jefimovs, Konstantins

Microelectronic engineering, 2018-05, Vol.192, p.19-24 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Effect of isopropanol on gold assisted chemical etching of silicon microstructures
Effect of isopropanol on gold assisted chemical etching of silicon microstructures
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Effect of isopropanol on gold assisted chemical etching of silicon microstructures

Romano, L. ; Vila-Comamala, J. ; Jefimovs, K. ; Stampanoni, M.

Microelectronic engineering, 2017-06, Vol.177, p.59-65 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Reactive ion etching of Ge-Sb-Se ternary chalcogenide glass films in fluorine plasma
Reactive ion etching of Ge-Sb-Se ternary chalcogenide glass films in fluorine plasma
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Reactive ion etching of Ge-Sb-Se ternary chalcogenide glass films in fluorine plasma

Xiong, Hao ; Shi, Yunfan ; Wang, Zheyao

Microelectronic engineering, 2020-03, Vol.225, p.111259, Article 111259 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Characterization of AlN and AlScN film ICP etching for micro/nano fabrication
Characterization of AlN and AlScN film ICP etching for micro/nano fabrication
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Characterization of AlN and AlScN film ICP etching for micro/nano fabrication

Luo, Zhifang ; Shao, Shuai ; Wu, Tao

Microelectronic engineering, 2021-04, Vol.242-243, p.111530, Article 111530 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks
Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks
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Sub-20 nm Si fins with high aspect ratio via pattern transfer using fullerene-based spin-on-carbon hard masks

Tseng, Li-Ting ; Kazazis, Dimitrios ; Wang, Xiaolong ; Popescu, Carmen M. ; Robinson, Alex P.G. ; Ekinci, Yasin

Microelectronic engineering, 2019-04, Vol.210, p.8-13 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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7
Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays
Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays
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Influence of the hard masks profiles on formation of nanometer Si scalloped fins arrays

Zhang, Qingzhu ; Tu, Hailing ; Yin, Huaxiang ; Wei, Feng ; Li, Junjie ; Meng, Lingkuan ; Zhang, Zhaohao ; Yan, Jiang ; Zhao, Hongbin ; Ma, Tongda ; Zhou, Zhangyu ; Fan, Yanyan ; Du, Jun

Microelectronic engineering, 2018-10, Vol.198, p.48-54 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching
Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching
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Nanofabrication by field-emission scanning probe lithography and cryogenic plasma etching

Lenk, Claudia ; Hofmann, Martin ; Lenk, Steve ; Kaestner, Marcus ; Ivanov, Tzvetan ; Krivoshapkina, Yana ; Nechepurenko, Diana ; Volland, Burkhard ; Holz, Mathias ; Ahmad, Ahmad ; Reum, Alexander ; Wang, Chen ; Jones, Mervyn ; Durrani, Zahid ; Rangelow, Ivo W.

Microelectronic engineering, 2018-05, Vol.192, p.77-82 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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9
Combination of thermal scanning probe lithography and ion etching to fabricate 3D silicon nanopatterns with extremely smooth surface
Combination of thermal scanning probe lithography and ion etching to fabricate 3D silicon nanopatterns with extremely smooth surface
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Combination of thermal scanning probe lithography and ion etching to fabricate 3D silicon nanopatterns with extremely smooth surface

Lisunova, Y. ; Brugger, J.

Microelectronic engineering, 2018-06, Vol.193, p.23-27 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Sub-10 nm electron and helium ion beam lithography using a recently developed alumina resist
Sub-10 nm electron and helium ion beam lithography using a recently developed alumina resist
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Sub-10 nm electron and helium ion beam lithography using a recently developed alumina resist

Cattoni, Andrea ; Mailly, Dominique ; Dalstein, Olivier ; Faustini, Marco ; Seniutinas, Gediminas ; Rösner, Benedikt ; David, Christian

Microelectronic engineering, 2018-06, Vol.193, p.18-22 [Periódico revisado por pares]

Amsterdam: Elsevier BV

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