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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Conference Paper
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Oscillation of the scattering time in a 2D electron system with oval antidotsG. M. Gusev X Kleber; U Gennser; D. K Maude; J. C Portal; D. I Lubyshev; Pierre Basmaji; Marcelo de Assumpção Pereira da Silva; J. C Rossi; Yu V Nastaushev; M. R Baklanov; International Conference on Modulated Semiconductor Structures (7. 1995 Madrid)Workbook I 1995Madrid 1995Available at IFSC - Inst. Física de São Carlos (PROD003635 ) and other locations(GetIt) |
| 2 |
Material Type: Article
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Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot latticePierre Basmaji G M Gusev; D I Lubyshev; Marcelo de Assumpção Pereira da Silva; J C Rossi; Y V Nastaushev; M R BaklanovLausanne v.35, p.322-4, 1995 Materials Science and Engineering BLausanne 1995Available at IFSC - Inst. Física de São Carlos (PROD003842 )(GetIt) |
| 3 |
Material Type: Article
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Charge capture in 'AL''GA''AS' / 'GA''AS' heterostructures with disordered antidot latticePierre Basmaji G M Gusev; D I Lubyshev; Marcelo de Assumpção Pereira da Silva; J C Rossi; Y V Nastaushev; M R BaklanovLausanne v.35, p.322-4, 1995 Materials Science and Engineering BLausanne 1995Available at IFSC - Inst. Física de São Carlos (PROD003842 )(GetIt) |
| 4 |
Material Type: Article
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Oscillation of the scattering time in a 2d electron system with oval antidotsG M Gusev X Kleber; U Gennser; D K Maude; J C Portal; D I Lubyshev; Pierre Basmaji; M P A Silva; J C Rossi; Y V Nastaushev; M R BaklanovOxford v.40, n.1-8, p.441-6, 1996 Solid State ElectronicsOxford 1996Available at IFSC - Inst. Física de São Carlos (PROD003952 )(GetIt) |
| 5 |
Material Type: Article
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Evaluation of Mechanical Properties of Porous OSG Films by PFQNM AFM and Benchmarking with Traditional InstrumentationOvchinnikov, I. S ; Vishnevskiy, A. S ; Seregin, D. S ; Rezvanov, A. A ; Schneider, D ; Sigov, A. S ; Vorotilov, K. A ; Baklanov, M. RLangmuir, 2020-08, Vol.36 (32), p.9377-9387 [Peer Reviewed Journal]American Chemical SocietyFull text available |
| 6 |
Material Type: Article
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Disorder-induced inhomogeneities of the superconducting state close to the superconductor-insulator transitionSacépé, B ; Chapelier, C ; Baturina, T I ; Vinokur, V M ; Baklanov, M R ; Sanquer, MPhys. Rev. Lett, 2008-10, Vol.101 (15), p.157006-157006, Article 157006 [Peer Reviewed Journal]United StatesFull text available |
| 7 |
Material Type: Article
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Low dielectric constant materials for microelectronicsMaex, K. ; Baklanov, M. R. ; Shamiryan, D. ; lacopi, F. ; Brongersma, S. H. ; Yanovitskaya, Z. S.Journal of applied physics, 2003-06, Vol.93 (11), p.8793-8841 [Peer Reviewed Journal]Full text available |
| 8 |
Material Type: Article
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Localized superconductivity in the quantum-critical region of the disorder-driven superconductor-insulator transition in TiN thin filmsBaturina, T I ; Mironov, A Yu ; Vinokur, V M ; Baklanov, M R ; Strunk, CPhys. Rev. Lett, 2007-12, Vol.99 (25), p.257003-257003, Article 257003 [Peer Reviewed Journal]United StatesFull text available |
| 9 |
Material Type: Article
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Charge Transport Mechanism in a PECVD Deposited Low-k SiOCH DielectricPerevalov, T. V. ; Gismatulin, A. A. ; Gritsenko, V. A. ; Xu, H. ; Zhang, J. ; Vorotilov, K. A. ; Baklanov, M. R.Journal of electronic materials, 2022-05, Vol.51 (5), p.2521-2527 [Peer Reviewed Journal]New York: Springer USFull text available |
| 10 |
Material Type: Article
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Intrinsic effect of porosity on mechanical and fracture properties of nanoporous ultralow- k dielectricsVanstreels, K. ; Wu, C. ; Verdonck, P. ; Baklanov, M. R.Applied physics letters, 2012-09, Vol.101 (12), p.123109 [Peer Reviewed Journal]Full text available |
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