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Deep-UV contact lithography using a trilevel resist system for magnetic bubble devices with submicron minimum feature
Deep-UV contact lithography using a trilevel resist system for magnetic bubble devices with submicron minimum feature
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Deep-UV contact lithography using a trilevel resist system for magnetic bubble devices with submicron minimum feature

UMEZAKI, H ; KOYAMA, N ; MARUYAMA, Y ; SUGITA, Y ; SUZUKI, R

Journal of the Electrochemical Society, 1985-10, Vol.132 (10), p.2440-2444 [Periódico revisado por pares]

Pennington, NJ: Electrochemical Society

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2
Simulation of magnetization distribution in magnetoresistive film under a longitudinal bias field
Simulation of magnetization distribution in magnetoresistive film under a longitudinal bias field
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Simulation of magnetization distribution in magnetoresistive film under a longitudinal bias field

ISHIKAWA, C ; SUZUKI, K ; KOYAMA, N ; YOSHIDA, K ; SUGITA, Y ; SHINAGAWA, K ; NAKATANI, Y ; HAYASHI, N

Journal of applied physics, 1993-11, Vol.74 (9), p.5666-5671 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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3
X-ray projection lithography using a Fresnel zone plate
X-ray projection lithography using a Fresnel zone plate
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X-ray projection lithography using a Fresnel zone plate

KOYAMA, N ; TSUYUZAKI, H ; KURODA, K ; SHIBAYAMA, A

Japanese Journal of Applied Physics, 1995, Vol.34 (12B), p.6748-6753 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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4
Patterning characteristics under small variations of the mask and wafer in SR lithography
Patterning characteristics under small variations of the mask and wafer in SR lithography
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Patterning characteristics under small variations of the mask and wafer in SR lithography

FUKUDA, M ; KOYAMA, N ; TSUYUZAKI, H ; SUZUKI, M ; ISHIHARA, S

Microelectronic engineering, 1996, Vol.30 (1-4), p.203-206 [Periódico revisado por pares]

Amsterdam: Elsevier Science

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5
Planar process for 16 Mb memory devices using thermal reflow-type polyimide
Planar process for 16 Mb memory devices using thermal reflow-type polyimide
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Planar process for 16 Mb memory devices using thermal reflow-type polyimide

UMEZAKI, H ; KOYAMA, N ; SUZUKI, R ; MATSUYAMA, H ; SHOOJI, F

Journal of the Electrochemical Society, 1989, Vol.136 (8), p.2357-2360 [Periódico revisado por pares]

Pennington, NJ: Electrochemical Society

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6
Solution-processable dendric triphenylamine nonamers as hole-transporting and hole-injection materials for organic light-emitting devices
Solution-processable dendric triphenylamine nonamers as hole-transporting and hole-injection materials for organic light-emitting devices
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Solution-processable dendric triphenylamine nonamers as hole-transporting and hole-injection materials for organic light-emitting devices

Ichikawa, Musubu ; Hibino, Kumiko ; Yokoyama, Norimasa ; Miki, Tetsuzo ; Koyama, Toshiki ; Taniguchi, Yoshio

Synthetic metals, 2006-12, Vol.156 (21), p.1383-1389 [Periódico revisado por pares]

Lausanne: Elsevier B.V

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7
Bipyridyl substituted triazoles as hole-blocking and electron-transporting materials for organic light-emitting devices
Bipyridyl substituted triazoles as hole-blocking and electron-transporting materials for organic light-emitting devices
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Bipyridyl substituted triazoles as hole-blocking and electron-transporting materials for organic light-emitting devices

Ichikawa, Musubu ; Fujimoto, Soichi ; Miyazawa, Yuta ; Koyama, Toshiki ; Yokoyama, Norimasa ; Miki, Tetsuzo ; Taniguchi, Yoshio

Organic electronics, 2008-02, Vol.9 (1), p.77-84 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods
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Fabrication of p-CuGaS2/n-ZnO:Al heterojunction light-emitting diode grown by metalorganic vapor phase epitaxy and helicon-wave-excited-plasma sputtering methods

CHICHIBU, Shigefusa F ; OHMORI, Takuya ; SHIBATA, Naoyuki ; KOYAMA, Takahiro ; ONUMA, Takeyoshi

The Journal of physics and chemistry of solids, 2005-11, Vol.66 (11), p.1868-1871 [Periódico revisado por pares]

Oxford: Elsevier

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9
Performance of a Cryogen-Free 30 T-Class Hybrid Magnet
Performance of a Cryogen-Free 30 T-Class Hybrid Magnet
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Performance of a Cryogen-Free 30 T-Class Hybrid Magnet

Watanabe, K. ; Nishijima, G. ; Awaji, S. ; Takahashi, K. ; Koyama, K. ; Kobayashi, N. ; Ishizuka, M. ; Itou, T. ; Tsurudome, T. ; Sakuraba, J.

IEEE transactions on applied superconductivity, 2006-06, Vol.16 (2), p.934-939 [Periódico revisado por pares]

New York, NY: IEEE

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10
Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures
Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures
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Characterization of BF2+ ion-implanted layers in strained-silicon/SiGe heterostructures

ISHIDORA, Yohei ; KOYAMA, Koji ; MORIOKA, Jun ; INADA, Taroh ; SUGII, Nobuyuki

Thin solid films, 2006-06, Vol.508 (1-2), p.284-287 [Periódico revisado por pares]

Lausanne: Elsevier Science

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