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Corrections to “A Highly Linear and Efficient 28-GHz PA With a P ₛₐₜ of 23.2 dBm, P ₁ dB of 22.7 dBm, and PAE of 35.5% in 65-nm Bulk CMOS” [early access, doi: 10.1109/JSSC.2020.3036830]
Corrections to “A Highly Linear and Efficient 28-GHz PA With a P ₛₐₜ of 23.2 dBm, P ₁ dB of 22.7 dBm, and PAE of 35.5% in 65-nm Bulk CMOS” [early access, doi: 10.1109/JSSC.2020.3036830]
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Corrections to “A Highly Linear and Efficient 28-GHz PA With a P ₛₐₜ of 23.2 dBm, P ₁ dB of 22.7 dBm, and PAE of 35.5% in 65-nm Bulk CMOS” [early access, doi: 10.1109/JSSC.2020.3036830]

Asoodeh, Alireza ; Lavasani, Hossein Miri ; Cai, Mengye ; Mirabbasi, Shahriar

IEEE journal of solid-state circuits, 2021-09, Vol.56 (9), p.2896-2896 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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2
64/50 dBc Over the First/Second Nyquist Zone
64/50 dBc Over the First/Second Nyquist Zone
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64/50 dBc Over the First/Second Nyquist Zone

Hung-Yi, Huang ; Xin-Yu, Chen ; Kuo, Tai-Haur

IEEE journal of solid-state circuits, 2021-01, Vol.56 (10), p.3145 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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A Process and Temperature Insensitive CMOS Linear TIA for 100 Gb/s/[Formula Omitted] PAM-4 Optical Links
A Process and Temperature Insensitive CMOS Linear TIA for 100 Gb/s/[Formula Omitted] PAM-4 Optical Links
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A Process and Temperature Insensitive CMOS Linear TIA for 100 Gb/s/[Formula Omitted] PAM-4 Optical Links

Lakshmikumar, Kadaba R ; Kurylak, Alexander ; Nagaraju, Manohar ; Booth, Richard ; Nandwana, Romesh Kumar ; Pampanin, Joe ; Boccuzzi, Vito

IEEE journal of solid-state circuits, 2019-01, Vol.54 (11), p.3180 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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4
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.1127-1127 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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5
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.834-834 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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6
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5554-5554 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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7
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.5222-5222 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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8
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices

IEEE transactions on electron devices, 2018-10, Vol.65 (10), p.4734-4734 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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9
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.4025-4025 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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10
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices
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Call for Papers for a Special Issue of IEEE Transactions on Electron Devices on Reliability of CMOS Logic, Memory, Power and Beyond CMOS Devices

IEEE transactions on electron devices, 2018-08, Vol.65 (8), p.3582-3582 [Periódico revisado por pares]

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

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