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Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation
Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation
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Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

Gonschorek, Marcus ; Carlin, Jean-Francois ; Feltin, Eric ; Py, Marcel ; Grandjean, Nicolas

Cambridge, Cambridge University Press

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2
Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN
Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN
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Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Corfdir, Pierre ; Ristic, Jelena ; Lefebvre, Pierre ; Zhu, Tiankai ; Martin, Denis ; Dussaigne, Amélie ; Ganière, Jean-Daniel ; Grandjean, Nicolas ; Deveaud-Plédran, Benoît

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3
Characterization of a-plane grown GaN on sapphire substrates by electron microscopy
Characterization of a-plane grown GaN on sapphire substrates by electron microscopy
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Characterization of a-plane grown GaN on sapphire substrates by electron microscopy

Arroyo Rojas Dasilva, Yadira

Lausanne, EPFL

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4
Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations
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Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Lyu, Sai ; Pasquarello, Alfredo

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5
Suppression of the quantum-confined Stark effect in polar nitride heterostructuresis
Suppression of the quantum-confined Stark effect in polar nitride heterostructuresis
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Suppression of the quantum-confined Stark effect in polar nitride heterostructuresis

Schlichting, S ; Hoenig, G. M. O ; Muessener, J ; Hille, P ; Grieb, T ; Westerkamp, S ; Teubert, J ; Schoermann, J ; Wagner, M. R ; Rosenauer, A ; Eickhoff, M ; Hoffmann, A ; Callsen, G

London, NATURE PUBLISHING GROUP

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6
Non-polar GaN epilayers and heterostructures for photonic applications
Non-polar GaN epilayers and heterostructures for photonic applications
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Non-polar GaN epilayers and heterostructures for photonic applications

Zhu, Tiankai

Lausanne, EPFL

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