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Photoluminescence of MBE grown wurtzite Be-doped GaN
Photoluminescence of MBE grown wurtzite Be-doped GaN
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Photoluminescence of MBE grown wurtzite Be-doped GaN

Dewsnip, D J ; Andrianov, A V ; Harrison, I ; Orton, J W ; Lacklison, D E ; Ren, G B ; Hooper, S E ; Cheng, T S ; Foxon, C T

Semiconductor science and technology, 1998-05, Vol.13 (5), p.500-504 [Periódico revisado por pares]

Bristol: IOP Publishing

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2
The electron mobility and compensation in n-type GaN
The electron mobility and compensation in n-type GaN
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The electron mobility and compensation in n-type GaN

Orton, J W ; Foxon, C T

Semiconductor science and technology, 1998-03, Vol.13 (3), p.310-313 [Periódico revisado por pares]

Bristol: IOP Publishing

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3
Low-temperature luminescence study of GaN films grown by MBE
Low-temperature luminescence study of GaN films grown by MBE
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Low-temperature luminescence study of GaN films grown by MBE

Andrianov, A V ; Lacklison, D E ; Orton, J W ; Dewsnip, D J ; Hooper, S E ; Foxon, C T

Semiconductor science and technology, 1996-03, Vol.11 (3), p.366-371 [Periódico revisado por pares]

Bristol: IOP Publishing

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4
Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy
Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy
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Secondary ion mass spectroscopy investigations of magnesium and carbon doped gallium nitride films grown by molecular beam epitaxy

Ber, B Ya ; Kudriavtsev, Yu A ; Merkulov, A V ; Novikov, S V ; Lacklison, D E ; Orton, J W ; Cheng, T S ; Foxon, C T

Semiconductor science and technology, 1998-01, Vol.13 (1), p.71-74 [Periódico revisado por pares]

Bristol: IOP Publishing

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5
Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux
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Improvement of the photoluminescence from gallium nitride layers grown by MBE with an additional incident indium flux

Foxon, C T ; Hooper, S E ; Cheng, T S ; Orton, J W ; Ren, G B ; Ber, B Ya ; Merkulov, A V ; Novikov, S V ; Tret'yakov, V V

Semiconductor science and technology, 1998-12, Vol.13 (12), p.1469-1471 [Periódico revisado por pares]

Bristol: IOP Publishing

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6
Observation of resonant Raman lines during the photoluminescence of doped GaN
Observation of resonant Raman lines during the photoluminescence of doped GaN
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Observation of resonant Raman lines during the photoluminescence of doped GaN

Dewsnip, D J ; Andrianov, A V ; Harrison, I ; Lacklison, D E ; Orton, J W ; Morgan, J ; Ren, G B ; Cheng, T S ; Hooper, S E ; Foxon, C T

Semiconductor science and technology, 1997-01, Vol.12 (1), p.55-58 [Periódico revisado por pares]

Bristol: IOP Publishing

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7
Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)
Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)
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Secondary-ion mass spectroscopy (SIMS) investigations of Be and Si incorporation in GaN grown by molecular beam epitaxy (MBE)

Cheng, T S ; Foxon, C T ; Jenkins, L C ; Hooper, S E ; Lacklison, D E ; Orton, J W ; Ber, B Ya ; Merkulov, A V ; Novikov, S V

Semiconductor science and technology, 1996-04, Vol.11 (4), p.538-541 [Periódico revisado por pares]

Bristol: IOP Publishing

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8
Recombination lifetime measurements in AlGaAs/GaAs quantum well structures
Recombination lifetime measurements in AlGaAs/GaAs quantum well structures
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Recombination lifetime measurements in AlGaAs/GaAs quantum well structures

Orton, J W ; Dawson, P ; Lacklison, D E ; Cheng, T S ; Foxon, C T

Semiconductor science and technology, 1994-09, Vol.9 (9), p.1616-1622 [Periódico revisado por pares]

Bristol: IOP Publishing

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9
MBE growth and characterization of magnesium-doped gallium nitride
MBE growth and characterization of magnesium-doped gallium nitride
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MBE growth and characterization of magnesium-doped gallium nitride

Dewsnip, D J ; Orton, J W ; Lacklison, D E ; Flannery, L ; Andrianov, A V ; Harrison, I ; Hooper, S E ; Cheng, T S ; Foxon, C T ; Novikov, S N ; Ber, B Ya ; Kudriavtsev, Yu A

Semiconductor science and technology, 1998-08, Vol.13 (8), p.927-935 [Periódico revisado por pares]

IOP Publishing

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10
Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate
Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate
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Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate

ANDRIANOV, A. V ; LACKLISON, D. E ; ORTON, J. W ; CHENG, T. S ; FOXON, C. T ; O'DONNELL, K. P ; NICHOLLS, J. F. H

Semiconductor science and technology, 1997, Vol.12 (1), p.59-63 [Periódico revisado por pares]

Bristol: Institute of Physics

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