Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Report
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Thermal Stability of Wurtzite and Sphalerite StructuresInomata,Yoshizo1971Texto completo disponível |
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2 |
Material Type: Report
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LOW TEMPERATURE THERMAL EXPANSION OF WURTZITE-PHASES OF IIB-VIB COMPOUNDS. PART I. THERMAL EXPANSION OF ZNS, WURTZITE FROM 2 DEGREES TO 317KReeber,R. R ; Powell,G. W1967Texto completo disponível |
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3 |
Material Type: Report
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Synthesis and Characterization of (Zn(SEt)Et)10, Formed via Insertion of Sulfur into Zn-C Bonds: A New Class of Wurtzite-like Cluster FrameworkHampden-Smith, Mark J ; Zeng, D ; Duesler, Eileen1994Texto completo disponível |
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4 |
Material Type: Report
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LOW TEMPERATURE THERMAL EXPANSION OF WURTZITE-PHASES OF IIB-VIB COMPOUNDSReeber,Robert Richard1969Texto completo disponível |
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5 |
Material Type: Report
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On the Wurtzite-Type SiC Whiskers Obtained by Sublimation and the Thermal Stability of Basic SiC PolytypesInomata,Yoshizo ; Inoue,Zenzaburo1971Texto completo disponível |
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6 |
Material Type: Report
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LOW TEMPERATURE THERMAL EXPANSION OF WURTZITE-PHASES OF IIB-VIB COMPOUNDS. PART II. THERMAL EXPANSION OF CdSe, CADMOSELITE, FROM 3 TO 380KReeber,R. R ; McLachlan,D. , Jr1968Texto completo disponível |
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7 |
Material Type: Report
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Modeling the Growth of Aluminum Gallium Nitride ((Al)GaN) Films Grown on Aluminum Nitride (AlN) SubstratesJones, Kenneth A ; Ciani, Anthony J ; Batyrev, Iskander ; Chung, Peter W2011Texto completo disponível |
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8 |
Material Type: Report
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Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and AmmoniaJacobs, R N ; Salamamca-Riba, L ; He, M ; Harris, G L ; Zhou, P2001Texto completo disponível |
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9 |
Material Type: Report
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10 |
Material Type: Report
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Nitride Semiconductors for Ultraviolet DetectionDavis, R. F ; Bremser, M. D ; Gruss, K ; Linthicum, K ; Ferry, B1995Texto completo disponível |