Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Hot-carrier Coulomb effects in GaAs investigated by femtosecond spectroscopy around the band edgeGONG, T ; NIGHAN, W. L ; FAUCHET, P. MApplied physics letters, 1990-12, Vol.57 (25), p.2713-2715 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Solitons and related periodic pulse evolutions in a femtosecond ring dye laserNighan, W.L. ; Gong, T. ; Fauchet, P.M.IEEE journal of quantum electronics, 1989-12, Vol.25 (12), p.2476-2484 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Femtosecond refractive-index spectral hole burning in intrinsic and doped GaAsGONG, T ; MERTZ, P ; NIGHAN, W. L ; FAUCHET, P. MApplied physics letters, 1991-08, Vol.59 (6), p.721-723 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Picosecond carrier dynamics in a-Si sub 0. 5 Ge sub 0. 5 :H measured with a free-electron laserFauchet, P.M. ; Young, D.A. ; Nighan, W.L. Jr ; Fortmann, C.M.IEEE journal of quantum electronics, 1991-12, Vol.27:12 [Periódico revisado por pares]United StatesTexto completo disponível |
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5 |
Material Type: Artigo
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Self-diffraction: A new method for characterization of ultrashort laser pulsesNighan, W.L. ; Gong, T. ; Liou, L. ; Fauchet, P.M.Optics communications, 1989, Vol.69 (3), p.339-344 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Femtosecond spectroscopic determination of the properties of free carriers in a-Si:HMourchid, A. ; Hulin, D. ; Vanderhaghen, R. ; Nighan, W.L. ; Gzara, K. ; Fauchet, P.M.Solid state communications, 1990-06, Vol.74 (11), p.1197-1200 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
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7 |
Material Type: Artigo
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Generation and control of solitons and solitonlike pulses in a femtosecond ring dye laserNighan, Jr, W L ; Gong, T ; Fauchet, P MOpt. Lett.; (United States), 1989-05, Vol.14 (9), p.447 [Periódico revisado por pares]United StatesSem texto completo |
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8 |
Material Type: Artigo
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The mechanism of subnanosecond carrier recombination in a-Si:HVanderhaghen, R. ; Mourchid, A. ; Hulin, D. ; Young, D.A. ; Nighan, W.L. ; Fauchet, P.M.Journal of non-crystalline solids, 1991, Vol.137, p.543-546 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Recombination mechanisms in Si and Si thin films determined by picosecond reflectivity measurements near Brewster's angleFAUCHET, P. M ; NIGHAN, W. L. JRApplied physics letters, 1986-03, Vol.48 (11), p.721-723 [Periódico revisado por pares]Melville, NY: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Trapping time in processed polycrystalline silicon measured by picosecond time-resolved reflectivityBAMBHA, N. K ; NIGHAN, W. L. JR ; CAMPBELL, I. H ; FAUCHET, P. M ; JOHNSON, N. MJournal of applied physics, 1988-04, Vol.63 (7), p.2316-2321 [Periódico revisado por pares]Woodbury, NY: American Institute of PhysicsTexto completo disponível |