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Refinado por: assunto: Nanoscience & Nanotechnology remover
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1
Optimization of the magnetic deflection system by the method of orthogonal design
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Optimization of the magnetic deflection system by the method of orthogonal design

Xie Zhi‐xing ; Huang Da‐quan ; Shen Qing‐gai

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-01, Vol.5 (1), p.153-155

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2
Investigation of minority carrier retention behind AlAs barriers
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Investigation of minority carrier retention behind AlAs barriers

Melloch, M. R. ; Cooper, J. A. ; Qian, Q‐D.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-05, Vol.5 (3), p.766-769

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3
Theoretical studies of reconstructed GaAs(100) surfaces using first principle calculations
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Theoretical studies of reconstructed GaAs(100) surfaces using first principle calculations

Qian, Guo‐Xin ; Martin, Richard M. ; Chadi, D. J.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-07, Vol.5 (4), p.933-938

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4
Surface structure and interface formation of Si on GaAs(100)
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Surface structure and interface formation of Si on GaAs(100)

Bachrach, R. Z. ; Bringans, R. D. ; Olmstead, M. A. ; Uhrberg, R. I. G.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-07, Vol.5 (4), p.1135-1140

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5
Molecular‐beam epitaxy of InSb/CdTe heterostructures
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Molecular‐beam epitaxy of InSb/CdTe heterostructures

Glenn, J. L. ; O, Sungki ; Kolodziejski, L. A. ; Gunshor, R. L. ; Kobayashi, M. ; Li, D. ; Otsuka, N. ; Haggerott, M. ; Pelekanos, N. ; Nurmikko, A. V.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-03, Vol.7 (2), p.249-252

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6
Electrical and optical characterization of molecular‐beam epitaxy grown Ga‐doped ZnSe
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Electrical and optical characterization of molecular‐beam epitaxy grown Ga‐doped ZnSe

Vaziri, M. ; Reifenberger, R. ; Gunshor, R. L. ; Kolodziejski, L. A. ; Venkatesan, S. ; Pierret, R. F.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-03, Vol.7 (2), p.253-258

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7
Electrical characterization of an epitaxial ZnSe/epitaxial GaAs heterointerface
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Electrical characterization of an epitaxial ZnSe/epitaxial GaAs heterointerface

Qian, Q. D. ; Qiu, J. ; Kobayashi, M. ; Gunshor, R. L. ; Melloch, M. R. ; Cooper, J. A.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-07, Vol.7 (4), p.793-798

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8
Electronic states of Sb, Bi, Au, and Sn clusters on GaAs(110)
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Electronic states of Sb, Bi, Au, and Sn clusters on GaAs(110)

Menon, Madhu ; Allen, Roland E.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990-07, Vol.8 (4), p.900-902

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9
Surface dielectric functions of (2×1) and (1×2) reconstructions of (001) GaAs surfaces
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Surface dielectric functions of (2×1) and (1×2) reconstructions of (001) GaAs surfaces

Chang, Yia‐Chung ; Aspnes, D. E.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990-07, Vol.8 (4), p.896-899

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10
Effect of GaAs surface reconstruction on interface state density of epitaxial ZnSe/epitaxial GaAs heterostructures
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Effect of GaAs surface reconstruction on interface state density of epitaxial ZnSe/epitaxial GaAs heterostructures

Qiu, J. ; Qian, Q.‐D. ; Kobayashi, M. ; Gunshor, R. L. ; Menke, D. R. ; Li, D. ; Otsuka, N.

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990-07, Vol.8 (4), p.701-704

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