1
Material Type:
Artigo
Optimization of the magnetic deflection system by the method of orthogonal design
Xie Zhi‐xing ; Huang Da‐quan ; Shen Qing‐gai
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-01, Vol.5 (1), p.153-155
Sem texto completo
2
Material Type:
Artigo
Investigation of minority carrier retention behind AlAs barriers
Melloch, M. R. ; Cooper, J. A. ; Qian , Q‐D.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-05, Vol.5 (3), p.766-769
Sem texto completo
3
Material Type:
Artigo
Theoretical studies of reconstructed GaAs(100) surfaces using first principle calculations
Qian , Guo‐Xin ; Martin, Richard M. ; Chadi, D. J.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-07, Vol.5 (4), p.933-938
Sem texto completo
4
Material Type:
Artigo
Surface structure and interface formation of Si on GaAs(100)
Bachrach, R. Z. ; Bringans, R. D. ; Olmstead, M. A. ; Uhrberg, R. I. G.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1987-07, Vol.5 (4), p.1135-1140
Sem texto completo
5
Material Type:
Artigo
Molecular‐beam epitaxy of InSb/CdTe heterostructures
Glenn, J. L. ; O, Sungki ; Kolodziejski, L. A. ; Gunshor, R. L. ; Kobayashi, M. ; Li, D. ; Otsuka, N. ; Haggerott, M. ; Pelekanos, N. ; Nurmikko, A. V.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-03, Vol.7 (2), p.249-252
Sem texto completo
6
Material Type:
Artigo
Electrical and optical characterization of molecular‐beam epitaxy grown Ga‐doped ZnSe
Vaziri, M. ; Reifenberger, R. ; Gunshor, R. L. ; Kolodziejski, L. A. ; Venkatesan, S. ; Pierret, R. F.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-03, Vol.7 (2), p.253-258
Sem texto completo
7
Material Type:
Artigo
Electrical characterization of an epitaxial ZnSe/epitaxial GaAs heterointerface
Qian , Q. D. ; Qiu, J. ; Kobayashi, M. ; Gunshor, R. L. ; Melloch, M. R. ; Cooper, J. A.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1989-07, Vol.7 (4), p.793-798
Sem texto completo
8
Material Type:
Artigo
Electronic states of Sb, Bi, Au, and Sn clusters on GaAs(110)
Menon, Madhu ; Allen, Roland E.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990-07, Vol.8 (4), p.900-902
Sem texto completo
9
Material Type:
Artigo
Surface dielectric functions of (2×1) and (1×2) reconstructions of (001) GaAs surfaces
Chang, Yia‐Chung ; Aspnes, D. E.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990-07, Vol.8 (4), p.896-899
Sem texto completo
10
Material Type:
Artigo
Effect of GaAs surface reconstruction on interface state density of epitaxial ZnSe/epitaxial GaAs heterostructures
Qiu, J. ; Qian , Q.‐D. ; Kobayashi, M. ; Gunshor, R. L. ; Menke, D. R. ; Li, D. ; Otsuka, N.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1990-07, Vol.8 (4), p.701-704
Sem texto completo