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1
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
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Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy

André Bohomoletz Henriques E T R Chidley; S K Haywood; R J Nicholas; N J Mason; P J Walker

v.6 , p.45, 1991 Semiconductor Science and Technology

1991

Item não circula. Consulte sua biblioteca.(Acessar)

2
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy

André Bohomoletz Henriques E T R Chidley; S K Haywood; R J Nicholas; N J Mason; P J Walker

v.6 , p.45, 1991 Semiconductor Science and Technology

1991

Item não circula. Consulte sua biblioteca.(Acessar)

3
Temperature-dependent cyclotron resonance in a hybridized electron–hole system in InAs/GaSb heterostructures
Temperature-dependent cyclotron resonance in a hybridized electron–hole system in InAs/GaSb heterostructures
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Temperature-dependent cyclotron resonance in a hybridized electron–hole system in InAs/GaSb heterostructures

Petchsingh, C ; Nicholas, R J ; Takashina, K ; Mason, N J

Semiconductor science and technology, 2007-03, Vol.22 (3), p.194-202 [Periódico revisado por pares]

Bristol: IOP Publishing

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4
Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron–hole system
Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron–hole system
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Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron–hole system

Takashina, K ; Nicholas, R J ; Kardynal, B ; Mason, N J ; Maude, D K ; Portal, J C

Semiconductor science and technology, 2006-12, Vol.21 (12), p.1758-1763 [Periódico revisado por pares]

Bristol: IOP Publishing

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5
Improved photoluminescence from electrochemically passivated GaSb
Improved photoluminescence from electrochemically passivated GaSb
Material Type:
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Improved photoluminescence from electrochemically passivated GaSb

Salesse, A ; Alabedra, R ; Chen, Y ; Lakrimi, M ; Nicholas, R J ; Mason, N J ; Walker, P J

Semiconductor science and technology, 1997-04, Vol.12 (4), p.413-418 [Periódico revisado por pares]

Bristol: IOP Publishing

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6
Gate oxide reliability projection to the sub-2 nm regime
Gate oxide reliability projection to the sub-2 nm regime
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Gate oxide reliability projection to the sub-2 nm regime

Weir, B E ; Alam, M A ; Bude, J D ; Silverman, P J ; Ghetti, A ; Baumann, F ; Diodato, P ; Monroe, D ; Sorsch, T ; Timp, G L ; Ma, Y ; Brown, M M ; Hamad, A ; Hwang, D ; Mason, P

Semiconductor science and technology, 2000-05, Vol.15 (5), p.455-461 [Periódico revisado por pares]

IOP Publishing

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7
Interface composition dependence of the band offset in InAs/GaSb
Interface composition dependence of the band offset in InAs/GaSb
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Interface composition dependence of the band offset in InAs/GaSb

Daly, M S ; Symons, D M ; Lakrimi, M ; Nicholas, R J ; Mason, N J ; Walker, P J

Semiconductor science and technology, 1996-05, Vol.11 (5), p.L823-826 [Periódico revisado por pares]

Bristol: IOP Publishing

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8
Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy
Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy
Material Type:
Artigo 		Adicionar ao Meu Espaço

Photoluminescence of GaSb grown by metal-organic vapour phase epitaxy

Chidley, E T R ; Haywood, S K ; Henriques, A B ; Mason, N J ; Nicholas, R J ; Walker, P J

Semiconductor science and technology, 1991-01, Vol.6 (1), p.45-53 [Periódico revisado por pares]

Bristol: IOP Publishing

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9
The interface properties of MIS structures on anodically oxidized GaSb
The interface properties of MIS structures on anodically oxidized GaSb
Material Type:
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The interface properties of MIS structures on anodically oxidized GaSb

Houston, G L B ; Chen, Y ; Singleton, J ; Mason, N J ; Walker, P J

Semiconductor science and technology, 1997-09, Vol.12 (9), p.1140-1146, Article 1140 [Periódico revisado por pares]

Bristol: IOP Publishing

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10
Improved materials for MOVPE growth of GaSb and InSb
Improved materials for MOVPE growth of GaSb and InSb
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Improved materials for MOVPE growth of GaSb and InSb

Graham, R M ; Jones, A C ; Mason, N J ; Rushworth, S ; Salesse, A ; Seong, T -Y ; Booker, G ; Smith, L ; Walker, P J

Semiconductor science and technology, 1993-10, Vol.8 (10), p.1797-1802 [Periódico revisado por pares]

Bristol: IOP Publishing

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Deste Autor:

  1. Walker, P
  2. Chidley, E
  3. Nicholas, R
  4. Mason, N
  5. Henriques, A

Neste Assunto:

  1. Physics
  2. Engineering, Electrical & Electronic
  3. Engineering
  4. Physical Sciences
  5. Materials Science

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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