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Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge')
Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge')
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Artigo 		Adicionar ao Meu Espaço

Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge')

Nelson Liebentritt de Almeida Braga 1962- A Buczkowski; H R Kirk; G A Rozgonyi

New York v.64, n.11, p.1410-2, mar. 1994 Applied Physics Letters

New York 1994

Item não circula. Consulte sua biblioteca.(Acessar)

2
Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge')
Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge')
Material Type:
Artigo 		Adicionar ao Meu Espaço

Formation of cylindrical n / p junction diodes by arsenic enhanced diffusion along interfacial misfit dislocations in p-type epitaxial 'SI' / 'SI' ('Ge')

Nelson Liebentritt de Almeida Braga 1962- A Buczkowski; H R Kirk; G A Rozgonyi

New York v.64, n.11, p.1410-2, mar. 1994 Applied Physics Letters

New York 1994

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Buczkowski, A
  2. Kirk, H
  3. Rozgonyi, G
  4. Braga, N

Neste Assunto:

  1. Circuitos Integrados

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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