Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Artigo
|
Mechanism of the Production of Concentric Spread PlasmaSumita, Masahiro ; Watanabe, SeiichiJapanese Journal of Applied Physics, 2001-02, Vol.40 (2R), p.819 [Periódico revisado por pares]Texto completo disponível |
|
2 |
Material Type: Artigo
|
Fluoride Resonant Tunneling Diodes on Si Substrates Improved by Additional Thermal Oxidation ProcessWatanabe, So ; Maeda, Motoki ; Sugisaki, Tsuyoshi ; Tsutsui, KazuoJapanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2637 [Periódico revisado por pares]Texto completo disponível |
|
3 |
Material Type: Artigo
|
ab initio Calculation of Capacitance of NanostructuresWatanabe, Kazuyuki ; Watanabe, Satoshi ; Tanaka, Michiko ; Nakaoka, NoriyukiJapanese Journal of Applied Physics, 2005-07, Vol.44 (7S), p.5348 [Periódico revisado por pares]Texto completo disponível |
|
4 |
Material Type: Artigo
|
Scanning Atom Probe Study of Dissociation of Organic Molecules on Titanium OxideNishikawa, Osamu ; Taniguchi, Masahiro ; Watanabe, Shingo ; Yamagishi, Akihiko ; Sasaki, TakayoshiJapanese Journal of Applied Physics, 2006-03, Vol.45 (3S), p.1892 [Periódico revisado por pares]Texto completo disponível |
|
5 |
Material Type: Artigo
|
Chemical Structure of Nitrogen Atoms in Thin-Film Nitrided Silicon Dioxide Formed on Silicon Substrate after Hydrogenation Reaction in Hydrofluoric AcidMizuta, Naomi ; Watanabe, SatoruJapanese Journal of Applied Physics, 2006-04, Vol.45 (4R), p.2408 [Periódico revisado por pares]Texto completo disponível |
|
6 |
Material Type: Artigo
|
Tight-Binding Calculation of Current Distribution in a Porphin Connected to Two Semi-Infinite WiresNoda, Masashi ; Watanabe, SatoshiJapanese Journal of Applied Physics, 2003-08, Vol.42 (Part 2, No. 8A), p.L892-L894 [Periódico revisado por pares]Texto completo disponível |
|
7 |
Material Type: Artigo
|
Characteristics of Integrated Antenna on Si for On-Chip Wireless InterconnectRashid, A. B. M. H. ; Watanabe, Shinji ; Kikkawa, TakamaroJapanese Journal of Applied Physics, 2003, Vol.42 (Part 1, No. 4B), p.2204-2209 [Periódico revisado por pares]Texto completo disponível |
|
8 |
Material Type: Artigo
|
Effect of High-Resistivity Si Substrate on Antenna Transmission Gain for On-Chip Wireless InterconnectsWatanabe, Shinji ; Rashid, A. B. M. Harun-ur ; Kikkawa, TakamaroJapanese Journal of Applied Physics, 2004-04, Vol.43 (4S), p.2297 [Periódico revisado por pares]Texto completo disponível |
|
9 |
Material Type: Artigo
|
Ab Initio Calculation of Capacitance of Semi-Infinite Jellium Electrodes with a Nanoscale GapTanaka, Michiko ; Gohda, Yoshihiro ; Furuya, Shinnosuke ; Watanabe, SatoshiJapanese Journal of Applied Physics, 2003-07, Vol.42 (Part 2, No. 7A), p.L766-L768 [Periódico revisado por pares]Texto completo disponível |
|
10 |
Material Type: Artigo
|
Characteristics of Si Integrated Antenna for Inter-Chip Wireless InterconnectionRashid, A. B. M. Harun-ur ; Watanabe, Shinji ; Kikkawa, TakamaroJapanese Journal of Applied Physics, 2004-04, Vol.43 (4S), p.2283 [Periódico revisado por pares]Texto completo disponível |