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Deposition and characterization of ternary thin films within the Ti–Al–C system by DC magnetron sputtering
Deposition and characterization of ternary thin films within the Ti–Al–C system by DC magnetron sputtering
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Deposition and characterization of ternary thin films within the Ti–Al–C system by DC magnetron sputtering

Wilhelmsson, O. ; Palmquist, J.-P. ; Lewin, E. ; Emmerlich, J. ; Eklund, P. ; Persson, P.O.Å. ; Högberg, H. ; Li, S. ; Ahuja, R. ; Eriksson, O. ; Hultman, L. ; Jansson, U.

Journal of crystal growth, 2006-05, Vol.291 (1), p.290-300 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates
Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates
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Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates

EKLUND, P ; MURUGAIAH, A ; EMMERLICH, J ; CZIGANY, Zs ; FRODELIUS, J ; BARSOUM, M. W ; HÖGBERG, H ; HULTMAN, L

Journal of crystal growth, 2007-06, Vol.304 (1), p.264-269 [Periódico revisado por pares]

Amsterdam: Elsevier

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3
Heteroepitaxial ZnO nano hexagons on p-type SiC
Heteroepitaxial ZnO nano hexagons on p-type SiC
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Heteroepitaxial ZnO nano hexagons on p-type SiC

Khranovskyy, V. ; Tsiaoussis, I. ; Yazdi, G.R. ; Hultman, L. ; Yakimova, R.

Journal of crystal growth, 2010, Vol.312 (2), p.327-332 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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4
Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

Buchholt, K. ; Eklund, P. ; Jensen, J. ; Lu, J. ; Ghandi, R. ; Domeij, M. ; Zetterling, C.M. ; Behan, G. ; Zhang, H. ; Lloyd Spetz, A. ; Hultman, L.

Journal of crystal growth, 2012-03, Vol.343 (1), p.133-137 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Sublimation epitaxy of AlN on SiC: growth morphology and structural features
Sublimation epitaxy of AlN on SiC: growth morphology and structural features
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Sublimation epitaxy of AlN on SiC: growth morphology and structural features

Kakanakova-Georgieva, A. ; Persson, P.O.Å. ; Yakimova, R. ; Hultman, L. ; Janzén, E.

Journal of crystal growth, 2004-12, Vol.273 (1), p.161-166 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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6
Epitaxial growth of tungsten carbide films using C60 as carbon precursor
Epitaxial growth of tungsten carbide films using C60 as carbon precursor
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Epitaxial growth of tungsten carbide films using C60 as carbon precursor

PALMQUIST, J.-P ; CZIGANY, Zs ; HULTMAN, L ; JANSSON, U

Journal of crystal growth, 2003-11, Vol.259 (1-2), p.12-17 [Periódico revisado por pares]

Amsterdam: Elsevier

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7
Epitaxial growth of tungsten carbide films using C 60 as carbon precursor
Epitaxial growth of tungsten carbide films using C 60 as carbon precursor
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Epitaxial growth of tungsten carbide films using C 60 as carbon precursor

Palmquist, J.-P. ; Czigány, Zs ; Hultman, L. ; Jansson, U.

Journal of crystal growth, 2003-11, Vol.259 (1), p.12-17 [Periódico revisado por pares]

Elsevier B.V

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8
Characterization of misfit dislocations in epitaxial (001)-oriented TiN, NbN, VN, and (Ti,Nb) N film heterostructures by transmission electron microscopy
Characterization of misfit dislocations in epitaxial (001)-oriented TiN, NbN, VN, and (Ti,Nb) N film heterostructures by transmission electron microscopy
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Characterization of misfit dislocations in epitaxial (001)-oriented TiN, NbN, VN, and (Ti,Nb) N film heterostructures by transmission electron microscopy

Hultman, L. ; Shinn, M. ; Mirkarimi, P.B. ; Barnett, S.A.

Journal of crystal growth, 1994, Vol.135 (1), p.309-317 [Periódico revisado por pares]

Elsevier B.V

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9
Interfacial void formation during vapor phase growth of 3C-SiC on Si(0 0 1) and Si(1 1 1) substrates. Characterization by transmission electron microscopy
Interfacial void formation during vapor phase growth of 3C-SiC on Si(0 0 1) and Si(1 1 1) substrates. Characterization by transmission electron microscopy
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Interfacial void formation during vapor phase growth of 3C-SiC on Si(0 0 1) and Si(1 1 1) substrates. Characterization by transmission electron microscopy

Björketun, L.-O. ; Hultman, L. ; Ivanov, I.P. ; Wahab, Q. ; Sundgren, J.-E.

Journal of crystal growth, 1997-12, Vol.182 (3), p.379-388 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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10
Strain relaxation of low-temperature deposited epitaxial titanium-carbide films
Strain relaxation of low-temperature deposited epitaxial titanium-carbide films
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Strain relaxation of low-temperature deposited epitaxial titanium-carbide films

Högberg, H ; Birch, J ; Johansson, M.P ; Jansson, U ; Hultman, L

Journal of crystal growth, 2000-10, Vol.219 (3), p.237-244 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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