Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Light Output Enhancement of Near UV-LED by Using Ti-Doped ITO Transparent Conducting LayerYung Hsun Lin ; Liu, Y S ; Liu, C YIEEE photonics technology letters, 2010-10, Vol.22 (19), p.1443-1445New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on SiliconLiu, Alan Y. ; Herrick, Robert W. ; Ueda, Osamu ; Petroff, Pierre M. ; Gossard, Arthur C. ; Bowers, John E.IEEE journal of selected topics in quantum electronics, 2015-11, Vol.21 (6), p.690-697 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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On the Formation and Evolution of Cu-Ni-Rich Bridges of Alnico Alloys With Thermomagnetic TreatmentFan, M. ; Liu, Y. ; Jha, Rajesh ; Dulikravich, George S. ; Schwartz, J. ; Koch, C. C.IEEE transactions on magnetics, 2016-08, Vol.52 (8), p.1-10New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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UV Enhanced Field Emission Performance of Mg-Doped ZnO NanorodsLiu, Y. H. ; Sheng-Joue Young ; Ji, L. W. ; Meen, T. H. ; Hsiao, C. H. ; Huang, C. S. ; Shoou-Jinn ChangIEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1541-1545 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Noise Properties of Mg-Doped ZnO Nanorods Visible-Blind PhotosensorsLiu, Y. H. ; Young, S. J. ; Ji, L. W. ; Chang, S. J.IEEE journal of selected topics in quantum electronics, 2015-07, Vol.21 (4), p.223-227 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Preparation and Application on Antenna of Soft Ferrite Core for Wireless Sensor NetworksLi, L. ; Fang, Y. K. ; Liu, Y. J.IEEE transactions on magnetics, 2015-11, Vol.51 (11), p.1-3New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Hydrothermal process fabrication of NiO–NiCoO2–Co3O4 composites used as supercapacitor materialsWang, X. W. ; Wang, X. E. ; Liu, Y. P. ; Kong, Y. Y. ; Sun, L. Y. ; Hu, Y. C. ; Zhu, Q. Q.Journal of materials science. Materials in electronics, 2017-10, Vol.28 (20), p.14928-14934 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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8 |
Material Type: Artigo
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Demonstration, analysis, and device design considerations for independent DG MOSFETsMasahara, M. ; Yongxun Liu ; Sakamoto, K. ; Endo, K. ; Matsukawa, T. ; Ishii, K. ; Sekigawa, T. ; Yamauchi, H. ; Tanoue, H. ; Kanemaru, S. ; Koike, H. ; Suzuki, E.IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.2046-2053 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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Preparation and performance of organic–inorganic halide perovskitesDou, S. Y. ; Yan, L. T. ; Liu, Y. C. ; Du, G. ; Zhou, P.Journal of materials science. Materials in electronics, 2013-12, Vol.24 (12), p.4862-4867 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
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10 |
Material Type: Artigo
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InGaZnO Thin-Film Transistors With Coplanar Control Gates for Single-Device Logic ApplicationsHu, S. G. ; Liu, P. ; Li, H. K. ; Chen, T. P. ; Zhang, Q. ; Deng, L. J. ; Liu, Y.IEEE transactions on electron devices, 2016-03, Vol.63 (3), p.1383-1387 [Periódico revisado por pares]New York: IEEETexto completo disponível |