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Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy
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Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy

Joyce, Hannah J ; Docherty, Callum J ; Gao, Qiang ; Tan, H Hoe ; Jagadish, Chennupati ; Lloyd-Hughes, James ; Herz, Laura M ; Johnston, Michael B

Nanotechnology, 2013-05, Vol.24 (21), p.214006-214006 [Periódico revisado por pares]

England: IOP Publishing

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2
Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics
Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics
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Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics

Kurita, Y. ; Ducournau, G. ; Coquillat, D. ; Satou, A. ; Kobayashi, K. ; Boubanga Tombet, S. ; Meziani, Y. M. ; Popov, V. V. ; Knap, W. ; Suemitsu, T. ; Otsuji, T.

Applied physics letters, 2014-06, Vol.104 (25) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Evidence of topological superconductivity in planar Josephson junctions
Evidence of topological superconductivity in planar Josephson junctions
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Evidence of topological superconductivity in planar Josephson junctions

Fornieri, Antonio ; Whiticar, Alexander M ; Setiawan, F ; Portolés, Elías ; Drachmann, Asbjørn C C ; Keselman, Anna ; Gronin, Sergei ; Thomas, Candice ; Wang, Tian ; Kallaher, Ray ; Gardner, Geoffrey C ; Berg, Erez ; Manfra, Michael J ; Stern, Ady ; Marcus, Charles M ; Nichele, Fabrizio

Nature (London), 2019-05, Vol.569 (7754), p.89-92 [Periódico revisado por pares]

England: Nature Publishing Group

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4
III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate
III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate
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III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Kunert, B. ; Guo, W. ; Mols, Y. ; Tian, B. ; Wang, Z. ; Shi, Y. ; Van Thourhout, D. ; Pantouvaki, M. ; Van Campenhout, J. ; Langer, R. ; Barla, K.

Applied physics letters, 2016-08, Vol.109 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs
InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs
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InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

Ruiz, Diego C. ; Saranovac, Tamara ; Han, Daxin ; Hambitzer, Anna ; Arabhavi, Akshay M. ; Ostinelli, Olivier ; Bolognesi, C. R.

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4685-4691 [Periódico revisado por pares]

New York: IEEE

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6
Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si
Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si
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Integration of Indium Arsenide/Indium Phosphide Core-Shell Nanowire Vertical Gate-All-Around Field-Effect Transistors on Si

Gamo, Hironori ; Tomioka, Katsuhiro

IEEE electron device letters, 2020-08, Vol.41 (8), p.1169-1172 [Periódico revisado por pares]

New York: IEEE

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7
Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition
Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition
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Effect of as flux rate during growth interruption on the performances of InAs/InGaAsP/InP quantum dots and their lasers grown by metal-organic chemical vapor deposition

Wang, Haomiao ; Chai, Hongyu ; Lv, Zunren ; Wang, Hong ; Yang, Xiaoguang ; Meng, Lei ; Yang, Tao

Journal of crystal growth, 2022-01, Vol.578, p.126424, Article 126424 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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8
Microbial toxicity of gallium- and indium-based oxide and arsenide nanoparticles
Microbial toxicity of gallium- and indium-based oxide and arsenide nanoparticles
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Microbial toxicity of gallium- and indium-based oxide and arsenide nanoparticles

Nguyen, Chi H. ; Field, Jim A. ; Sierra-Alvarez, Reyes

Journal of environmental science and health. Part A, Toxic/hazardous substances & environmental engineering, 2020-01, Vol.55 (2), p.168-178 [Periódico revisado por pares]

England: Taylor & Francis

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9
Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications
Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications
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Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications

Sala, Elisa M. ; Na, Young In ; Godsland, Max ; Heffernan, Jon

Physica status solidi. PSS-RRL. Rapid research letters, 2024-02, Vol.18 (2), p.n/a [Periódico revisado por pares]

Weinheim: Wiley Subscription Services, Inc

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10
Strong Tuning of Rashba Spin–Orbit Interaction in Single InAs Nanowires
Strong Tuning of Rashba Spin–Orbit Interaction in Single InAs Nanowires
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Strong Tuning of Rashba Spin–Orbit Interaction in Single InAs Nanowires

Liang, Dong ; Gao, Xuan P.A

Nano letters, 2012-06, Vol.12 (6), p.3263-3267 [Periódico revisado por pares]

Washington, DC: American Chemical Society

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