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Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector
Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector
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Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector

Chowdhury, Arun Malla ; Chandan, Greeshma ; Pant, Rohit ; Roul, Basanta ; Singh, Deependra Kumar ; Nanda, K. K ; Krupanidhi, S. B

ACS applied materials & interfaces, 2019-03, Vol.11 (10), p.10418-10425 [Periódico revisado por pares]

United States: American Chemical Society

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2
Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure
Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure
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Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure

Chowdhury, Arun Malla ; Pant, Rohit ; Roul, Basanta ; Singh, Deependra Kumar ; Nanda, K. K. ; Krupanidhi, S. B.

Journal of applied physics, 2019-07, Vol.126 (2) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces
Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces
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Different types of band alignment at MoS2/(Al, Ga, In)N heterointerfaces

Singh, Deependra Kumar ; Roul, Basanta ; Pant, Rohit ; Chowdhury, Arun Malla ; Nanda, K. K. ; Krupanidhi, S. B.

Applied physics letters, 2020-06, Vol.116 (25) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide
Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide
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Enhancement of Photoresponsivity of β-In2S3/Si Broadband Photodetector by Decorating With Reduced-Graphene Oxide

Roul, Basanta ; Singh, Deependra Kumar ; Chowdhury, Arun Malla ; Kumari, Malti ; Kumawat, Kishan Lal ; Nanda, K. K. ; Krupanidhi, S. B.

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4355-4361 [Periódico revisado por pares]

New York: IEEE

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5
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
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Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

Roul, Basanta ; Rajpalke, Mohana K ; Bhat, Thirumaleshwara N ; Kumar, Mahesh ; Sinha, Neeraj ; Kalghatgi, A T ; Krupanidhi, S B

Journal of applied physics, 2011-02, Vol.109 (4), p.044502-044502-5 [Periódico revisado por pares]

United States: American Institute of Physics

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6
Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE
Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE
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Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE

Kumar, Mahesh ; Rajpalke, Mohana K. ; Bhat, Thirumaleshwara N. ; Roul, Basanta ; Sinha, Neeraj ; Kalghatgi, A.T. ; Krupanidhi, S.B.

Materials letters, 2011-05, Vol.65 (9), p.1396-1399 [Periódico revisado por pares]

Elsevier B.V

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7
Temperature Dependent “S-Shaped” Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment
Temperature Dependent “S-Shaped” Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment
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Temperature Dependent “S-Shaped” Photoluminescence Behavior of InGaN Nanolayers: Optoelectronic Implications in Harsh Environment

Chowdhury, Arun Malla ; Roul, Basanta ; Singh, Deependra Kumar ; Pant, Rohit ; Nanda, K. K ; Krupanidhi, S. B

ACS applied nano materials, 2020-08, Vol.3 (8), p.8453-8460 [Periódico revisado por pares]

American Chemical Society

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8
Spectroscopic Studies of In2O3 Nanostructures; Photovoltaic Demonstration of In2O3/p-Si Heterojunction
Spectroscopic Studies of In2O3 Nanostructures; Photovoltaic Demonstration of In2O3/p-Si Heterojunction
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Spectroscopic Studies of In2O3 Nanostructures; Photovoltaic Demonstration of In2O3/p-Si Heterojunction

Bhat, Thirumaleshwara N. ; Roul, Basanta ; Rajpalke, Mohana K. ; Kumar, Mahesh ; Krupanidhi, S. B.

Journal of nanoscience and nanotechnology, 2013-01, Vol.13 (1), p.498-503

26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers

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9
InN Quantum Dot Based Infra-Red Photodetectors
InN Quantum Dot Based Infra-Red Photodetectors
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InN Quantum Dot Based Infra-Red Photodetectors

Shetty, Arjun ; Kumar, Mahesh ; Roul, Basanta ; Vinoy, K. J. ; Krupanidhi, S. B.

Journal of nanoscience and nanotechnology, 2016-01, Vol.16 (1), p.709-714

26650 The Old Road, Suite 208, Valencia, California 91381-0751, USA: American Scientific Publishers

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10
Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE
Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE
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Indium flux, growth temperature and RF power induced effects in InN layers grown on GaN/Si substrate by plasma-assisted MBE

Kumar, Mahesh ; Bhat, Thirumaleshwara N. ; Rajpalke, Mohana K. ; Roul, Basanta ; Kalghatgi, A.T. ; Krupanidhi, S.B.

Journal of alloys and compounds, 2012-02, Vol.513, p.6-9 [Periódico revisado por pares]

Kidlington: Elsevier B.V

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