Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wellsJollivet, A. ; Hinkov, B. ; Pirotta, S. ; Hoang, H. ; Derelle, S. ; Jaeck, J. ; Tchernycheva, M. ; Colombelli, R. ; Bousseksou, A. ; Hugues, M. ; Le Biavan, N. ; Tamayo-Arriola, J. ; Montes Bajo, M. ; Rigutti, L. ; Hierro, A. ; Strasser, G. ; Chauveau, J.-M. ; Julien, F. H.Applied physics letters, 2018-12, Vol.113 (25), p.251104-1 - 251104-5 [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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2 |
Material Type: Artigo
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Transport of indirect excitons in ZnO quantum wellsKuznetsova, Y Y ; Fedichkin, F ; Andreakou, P ; Calman, E V ; Butov, L V ; Lefebvre, P ; Bretagnon, T ; Guillet, T ; Vladimirova, M ; Morhain, C ; Chauveau, J-MOptics letters, 2015-08, Vol.40 (15), p.3667-3670 [Periódico revisado por pares]United States: Optical Society of America - OSA PublishingSem texto completo |
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3 |
Material Type: Artigo
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A photonic atom probe coupling 3D atomic scale analysis with in situ photoluminescence spectroscopyHouard, J. ; Normand, A. ; Di Russo, E. ; Bacchi, C. ; Dalapati, P. ; Beainy, G. ; Moldovan, S. ; Da Costa, G. ; Delaroche, F. ; Vaudolon, C. ; Chauveau, J. M. ; Hugues, M. ; Blavette, D. ; Deconihout, B. ; Vella, A. ; Vurpillot, F. ; Rigutti, L.Review of scientific instruments, 2020-08, Vol.91 (8), p.083704-083704 [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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Access to residual carrier concentration in ZnO nanowires by calibrated scanning spreading resistance microscopyWang, L. ; Chauveau, J. M. ; Brenier, R. ; Sallet, V. ; Jomard, F. ; Sartel, C. ; Brémond, G.Applied physics letters, 2016-03, Vol.108 (13) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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5 |
Material Type: Artigo
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Nanoscale calibration of n-type ZnO staircase structures by scanning capacitance microscopyWang, L. ; Laurent, J. ; Chauveau, J. M. ; Sallet, V. ; Jomard, F. ; Brémond, G.Applied physics letters, 2015-11, Vol.107 (19) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Ga-doping of nonpolar m-plane ZnMgO with high Mg contentsTamayo-Arriola, J. ; Montes Bajo, M. ; Le Biavan, N. ; Lefebvre, D. ; Kurtz, A. ; Ulloa, J.M. ; Hugues, M. ; Chauveau, J.M. ; Hierro, A.Journal of alloys and compounds, 2018-10, Vol.766, p.436-441 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Window increasing technique to discriminate mathematical and physical resonant poles extracted from antenna responseSarrazin, F ; Pouliguen, P ; Sharaiha, A ; Potier, P ; Chauveau, JElectronics letters, 2014-02, Vol.50 (5), p.343-344 [Periódico revisado por pares]Stevenage: The Institution of Engineering and TechnologyTexto completo disponível |
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8 |
Material Type: Artigo
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Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAsCordier, Y. ; Lorenzini, P. ; Chauveau, J.-M. ; Ferré, D. ; Androussi, Y. ; DiPersio, J. ; Vignaud, D. ; Codron, J.-L.Journal of crystal growth, 2003-04, Vol.251 (1), p.822-826 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μmTournié, E. ; Pinault, M.-A. ; Laügt, M. ; Chauveau, J.-M. ; Trampert, A. ; Ploog, K. H.Applied physics letters, 2003-03, Vol.82 (12), p.1845-1847 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wellsChauveau, J.-M. ; Trampert, A. ; Ploog, K. H. ; Pinault, M.-A. ; Tournié, E.Applied physics letters, 2003-05, Vol.82 (20), p.3451-3453 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |