Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Livro
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Computer Graphics InterfaceKarla Steinbrugge Chauveau Janet S Chin; Theodore Niles Reed; B ShepherdButterworth-Heinemann 1991Acesso online |
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2 |
Material Type: Artigo
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Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wellsChauveau, J.-M. ; Trampert, A. ; Ploog, K. H. ; Tournié, E.Applied physics letters, 2004-04, Vol.84 (14), p.2503-2505 [Periódico revisado por pares]Texto completo disponível |
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3 |
Material Type: Artigo
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Indium content measurements in metamorphic high electron mobility transistor structures by combination of x-ray reciprocal space mapping and transmission electron microscopyChauveau, J.-M. ; Androussi, Y. ; Lefebvre, A. ; Di Persio, J. ; Cordier, Y.Journal of applied physics, 2003-04, Vol.93 (7), p.4219-4225 [Periódico revisado por pares]Texto completo disponível |
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4 |
Material Type: Artigo
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Nitrogen-dependent optimum annealing temperature of Ga(As,N)Mussler, G. ; Chauveau, J.-M. ; Trampert, A. ; Ramsteiner, M. ; Däweritz, L. ; Ploog, K.H.Journal of crystal growth, 2004-06, Vol.267 (1), p.60-66 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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Annealing effects on the crystal structure of GaInNAs quantum wells with large In and N content grown by molecular beam epitaxyHierro, A. ; Ulloa, J.-M. ; Chauveau, J.-M. ; Trampert, A. ; Pinault, M.-A. ; Tournié, E. ; Guzmán, A. ; Sánchez-Rojas, J. L. ; Calleja, E.Journal of applied physics, 2003-08, Vol.94 (4), p.2319-2324 [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Correlations between structural and optical properties of GaInNAs quantum wells grown by MBEChauveau, J.-M. ; Trampert, A. ; Pinault, M.-A. ; Tournié, E. ; Du, K. ; Ploog, K.H.Journal of crystal growth, 2003-04, Vol.251 (1), p.383-387 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Behavioural responses of South African youth to the HIV/AIDS epidemic: A nationwide surveySimbayi, L. C. ; Chauveau, J. ; Shisana, O.AIDS care, 2004-07, Vol.16 (5), p.605-618 [Periódico revisado por pares]England: Taylor & FrancisTexto completo disponível |
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8 |
Material Type: Artigo
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Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAsCordier, Y. ; Lorenzini, P. ; Chauveau, J.-M. ; Ferré, D. ; Androussi, Y. ; DiPersio, J. ; Vignaud, D. ; Codron, J.-L.Journal of crystal growth, 2003-04, Vol.251 (1), p.822-826 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μmTournié, E. ; Pinault, M.-A. ; Laügt, M. ; Chauveau, J.-M. ; Trampert, A. ; Ploog, K. H.Applied physics letters, 2003-03, Vol.82 (12), p.1845-1847 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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HIV/AIDS prevalence among South African health workersSHISANA, O ; HALL, E. J ; MALULEKE, R ; CHAUVEAU, J ; SCHWABE, CSouth African medical journal, 2004-10, Vol.94 (10), p.846-850 [Periódico revisado por pares]Pinelands: Medical Association of South AfricaTexto completo disponível |