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1 |
Material Type: Artigo
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Benefits of homoepitaxy on the properties of nonpolar (Zn,Mg)O/ZnO quantum wells on a -plane ZnO substratesChauveau, J.-M ; Teisseire, M ; Kim-Chauveau, H ; Deparis, C ; Morhain, C ; Vinter, BApplied physics letters, 2010-08, Vol.97 (8), p.081903-081903-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wellsJollivet, A. ; Hinkov, B. ; Pirotta, S. ; Hoang, H. ; Derelle, S. ; Jaeck, J. ; Tchernycheva, M. ; Colombelli, R. ; Bousseksou, A. ; Hugues, M. ; Le Biavan, N. ; Tamayo-Arriola, J. ; Montes Bajo, M. ; Rigutti, L. ; Hierro, A. ; Strasser, G. ; Chauveau, J.-M. ; Julien, F. H.Applied physics letters, 2018-12, Vol.113 (25), p.251104-1 - 251104-5 [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Homoepitaxy of non-polar ZnO/(Zn,Mg)O multi-quantum wells: From a precise growth control to the observation of intersubband transitionsLe Biavan, N. ; Hugues, M. ; Montes Bajo, M. ; Tamayo-Arriola, J. ; Jollivet, A. ; Lefebvre, D. ; Cordier, Y. ; Vinter, B. ; Julien, F.-H. ; Hierro, A. ; Chauveau, J.-M.Applied physics letters, 2017-12, Vol.111 (23) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Polarization-sensitive Schottky photodiodes based on a-plane ZnO/ZnMgO multiple quantum-wellsTabares, G ; Hierro, A ; Vinter, B ; Chauveau, J.-MApplied physics letters, 2011-08, Vol.99 (7), p.071108-071108-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Anisotropic strain effects on the photoluminescence emission from heteroepitaxial and homoepitaxial nonpolar (Zn,Mg)O/ZnO quantum wellsChauveau, J.-M ; Teisseire, M ; Kim-Chauveau, H ; Morhain, C ; Deparis, C ; Vinter, BJournal of applied physics, 2011-05, Vol.109 (10), p.102420-102420-6 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Composition Metrology of Ternary Semiconductor Alloys Analyzed by Atom Probe TomographyDi Russo, E ; Moyon, F ; Gogneau, N ; Largeau, L ; Giraud, E ; Carlin, J.-F ; Grandjean, N ; Chauveau, J. M ; Hugues, M ; Blum, I ; Lefebvre, W ; Vurpillot, F ; Blavette, D ; Rigutti, LJournal of physical chemistry. C, 2018-07, Vol.122 (29), p.16704-16714 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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Material Type: Artigo
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Low temperature reflectivity study of nonpolar ZnO/(Zn,Mg)O quantum wells grown on M-plane ZnO substratesBéaur, L ; Bretagnon, T ; Brimont, C ; Guillet, T ; Gil, B ; Tainoff, D ; Teisseire, M ; Chauveau, J.-MApplied physics letters, 2011-03, Vol.98 (10), p.101913-101913-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxyCordier, Y. ; Moreno, J.-C. ; Baron, N. ; Frayssinet, E. ; Chauveau, J.-M. ; Nemoz, M. ; Chenot, S. ; Damilano, B. ; Semond, F.Journal of crystal growth, 2010-09, Vol.312 (19), p.2683-2688 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
9 |
Material Type: Artigo
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The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templatesKIM-CHAUVEAU, H ; DE MIERRY, P ; CHAUVEAU, J.-M ; DUBOZ, J.-YJournal of crystal growth, 2011-02, Vol.316 (1), p.30-36 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
10 |
Material Type: Artigo
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Interface structure and anisotropic strain relaxation of nonpolar wurtzite ( 11 2 ¯ 0 ) and ( 10 1 ¯ 0 ) orientations: ZnO epilayers grown on sapphireChauveau, J.-M ; Vennéguès, P ; Laügt, M ; Deparis, C ; Zuniga-Perez, J ; Morhain, CJournal of applied physics, 2008-10, Vol.104 (7), p.073535-073535-7 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |