Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Electrical Characterization of Emerging Transistor Technologies: Issues and ChallengesHaferlach, Max ; Pacheco, Anibal ; Sakalas, Paulius ; Alexandru, Mihaela ; Hermann, Sascha ; Nardmann, Tobias ; Schroter, Michael ; Claus, MartinIEEE transactions on nanotechnology, 2016-07, Vol.15 (4), p.619-626 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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On Local Sensing of Spin Hall Effect in Tungsten Films by Using STM-Based MeasurementsTing Xie ; Dreyer, Michael ; Bowen, David ; Hinkel, Dan ; Butera, R. E. ; Krafft, Charles ; Mayergoyz, IsaakIEEE transactions on nanotechnology, 2018-09, Vol.17 (5), p.914-919 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Reset Variability in Phase Change Memory for Hardware Security ApplicationsNoor, Nafisa ; Muneer, Sadid ; Khan, Raihan Sayeed ; Gorbenko, Anna ; Adnane, L'Hacene ; Kashem, Md Tashfiq Bin ; Scoggin, Jake ; Dirisaglik, Faruk ; Cywar, Adam ; Gokirmak, Ali ; Silva, HelenaIEEE transactions on nanotechnology, 2021, Vol.20, p.75-82 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Nanosecond Analog Programming of Substoichiometric Silicon Oxide Resistive RAMMontesi, Luca ; Buckwell, Mark ; Zarudnyi, Konstantin ; Garnett, Leon ; Hudziak, Steven ; Mehonic, Adnan ; Kenyon, Anthony J.IEEE transactions on nanotechnology, 2016-05, Vol.15 (3), p.428-434 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Active properties of carbon nanotube field-effect transistors deduced from S parameters measurementsBethoux, J.-M. ; Happy, H. ; Siligaris, A. ; Dambrine, G. ; Borghetti, J. ; Derycke, V. ; Bourgoin, J.-P.IEEE transactions on nanotechnology, 2006-07, Vol.5 (4), p.335-342 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Investigation of Sub-10-nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors for Electrostatic Discharge ApplicationsLiu, W ; Liou, J J ; Jiang, Y ; Singh, N ; Lo, G Q ; Chung, J ; Jeong, Y HIEEE transactions on nanotechnology, 2010-05, Vol.9 (3), p.352-354 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Spin state readout by quantum jump technique: for the purpose of quantum computingPazy, E. ; Calarco, T. ; Zoller, P.IEEE transactions on nanotechnology, 2004-03, Vol.3 (1), p.10-16 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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Offset Field Control for VCMA-MRAMCarpenter, Robert ; Kim, Woojin ; Sankaran, Kiroubanand ; Chroud, Mohamed Ben ; Monteiro, Maxwel Gama ; Swerts, Johan ; Kar, Gouri Sankar ; Couet, SebastienIEEE transactions on nanotechnology, 2023, Vol.22, p.564-568 [Periódico revisado por pares]New York: IEEETexto completo disponível |