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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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| 1 |
![A 30.1 mW / [Formula Omitted]m2 SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node](../images/pixel.png){kind=tracking}
Material Type: Artigo
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A 30.1 mW / [Formula Omitted]m2 SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS NodeGauthier, A ; Aouimeur, W ; Okada, E ; Guitard, N ; Chevalier, P ; Gaquiere, CIEEE electron device letters, 2020-01, Vol.41 (1), p.12 [Periódico revisado por pares]New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)Texto completo disponível |
| 2 |
Material Type: Artigo
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Silicon quantum electronicsZwanenburg, Floris A. ; Dzurak, Andrew S. ; Morello, Andrea ; Simmons, Michelle Y. ; Hollenberg, Lloyd C. L. ; Klimeck, Gerhard ; Rogge, Sven ; Coppersmith, Susan N. ; Eriksson, Mark A.Reviews of modern physics, 2013-07, Vol.85 (3), p.961-1019 [Periódico revisado por pares]Texto completo disponível |
| 3 |
Material Type: Artigo
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Direct-bandgap emission from hexagonal Ge and SiGe alloysFadaly, Elham M T ; Dijkstra, Alain ; Suckert, Jens Renè ; Ziss, Dorian ; van Tilburg, Marvin A J ; Mao, Chenyang ; Ren, Yizhen ; van Lange, Victor T ; Korzun, Ksenia ; Kölling, Sebastian ; Verheijen, Marcel A ; Busse, David ; Rödl, Claudia ; Furthmüller, Jürgen ; Bechstedt, Friedhelm ; Stangl, Julian ; Finley, Jonathan J ; Botti, Silvana ; Haverkort, Jos E M ; Bakkers, Erik P A MNature (London), 2020-04, Vol.580 (7802), p.205-209 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
| 4 |
Material Type: Artigo
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SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocationsChoi, Shinhyun ; Tan, Scott H ; Li, Zefan ; Kim, Yunjo ; Choi, Chanyeol ; Chen, Pai-Yu ; Yeon, Hanwool ; Yu, Shimeng ; Kim, JeehwanNature materials, 2018-04, Vol.17 (4), p.335-340 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
| 5 |
Material Type: Artigo
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Subvalent mixed SixGey oligomers: (Cl3Si)4Ge and Cl2(Me2EtN)SiGe(SiCl3)2Kunkel, Chantal ; Bolte, Michael ; Hans-Wolfram Lerner ; Albert, Philipp ; Wagner, MatthiasChemical communications (Cambridge, England), 2021-11, Vol.57 (90), p.12028-12031 [Periódico revisado por pares]Cambridge: Royal Society of ChemistryTexto completo disponível |
| 6 |
Material Type: Artigo
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A 77-GHz FMCW MIMO Radar Based on an SiGe Single-Chip TransceiverFeger, R. ; Wagner, C. ; Schuster, S. ; Scheiblhofer, S. ; Jager, H. ; Stelzer, A.IEEE transactions on microwave theory and techniques, 2009-05, Vol.57 (5), p.1020-1035 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 7 |
Material Type: Artigo
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Erratum: “Porosity as a function of stoichiometry and implantation temperature in Ge/Si1-xGex alloys” [J. Appl. Phys. 119, 094303 (2016)]Alkhaldi, H. S. ; Kremer, F. ; Bierschenk, T. ; Hansen, J. L. ; Nylandsted-Larsen, A. ; Williams, J. S. ; Ridgway, M. C.Journal of applied physics, 2017-01, Vol.121 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
| 8 |
Material Type: Artigo
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Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillationsConnors, Elliot J ; Nelson, J ; Edge, Lisa F ; Nichol, John MNature communications, 2022-02, Vol.13 (1), p.940-940, Article 940 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
| 9 |
Material Type: Artigo
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A 28-GHz 32-Element TRX Phased-Array IC With Concurrent Dual-Polarized Operation and Orthogonal Phase and Gain Control for 5G CommunicationsSadhu, Bodhisatwa ; Tousi, Yahya ; Hallin, Joakim ; Sahl, Stefan ; Reynolds, Scott K. ; Renstrom, Orjan ; Sjogren, Kristoffer ; Haapalahti, Olov ; Mazor, Nadav ; Bokinge, Bo ; Weibull, Gustaf ; Bengtsson, Hakan ; Carlinger, Anders ; Westesson, Eric ; Thillberg, Jan-Erik ; Rexberg, Leonard ; Yeck, Mark ; Xiaoxiong Gu ; Ferriss, Mark ; Duixian Liu ; Friedman, Daniel ; Valdes-Garcia, AlbertoIEEE journal of solid-state circuits, 2017-12, Vol.52 (12), p.3373-3391 [Periódico revisado por pares]New York: IEEETexto completo disponível |
| 10 |
Material Type: Artigo
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Starke Lichtemission in hexagonalen Ge‐ und SiGe‐Halbleitern: HalbleiterphysikBechstedt, Friedhelm ; Botti, Silvana ; Rödl, Claudia ; Haverkort, JosPhysik in unserer Zeit, 2020-09, Vol.51 (5), p.216-217Weinheim: Wiley Subscription Services, IncTexto completo disponível |
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