Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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A 77-GHz FMCW MIMO Radar Based on an SiGe Single-Chip TransceiverFeger, R. ; Wagner, C. ; Schuster, S. ; Scheiblhofer, S. ; Jager, H. ; Stelzer, A.IEEE transactions on microwave theory and techniques, 2009-05, Vol.57 (5), p.1020-1035 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS TechnologiesKissinger, Dietmar ; Kahmen, Gerhard ; Weigel, RobertIEEE transactions on microwave theory and techniques, 2021-10, Vol.69 (10), p.4541-4560 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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SiGe HBT Technology: Future Trends and TCAD-Based RoadmapSchroter, Michael ; Rosenbaum, Tommy ; Chevalier, Pascal ; Heinemann, Bernd ; Voinigescu, Sorin P. ; Preisler, Ed ; Bock, Josef ; Mukherjee, AnindyaProceedings of the IEEE, 2017-06, Vol.105 (6), p.1068-1086 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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63.5-65.5-GHz Transmit/Receive Phased-Array Communication Link With 0.5-2 Gb/s at 100-800 m and ± 50° Scan AnglesRupakula, Bhaskara ; Nafe, Ahmed ; Zihir, Samet ; Wang, Yaochen ; Lin, Tsu-Wei ; Rebeiz, GabrielIEEE transactions on microwave theory and techniques, 2018-09, Vol.66 (9), p.4108-4120 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Vertical P-TFET With a P-Type SiGe PocketLi, Weicong ; Woo, Jason C. S.IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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Study and Analysis of the Effects of SiGe Source and Pocket-Doped Channel on Sensing Performance of Dielectrically Modulated Tunnel FET-Based BiosensorsKanungo, Sayan ; Chattopadhyay, Sanatan ; Gupta, Partha Sarathi ; Sinha, Kunal ; Rahaman, HafizurIEEE transactions on electron devices, 2016-06, Vol.63 (6), p.2589-2596 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Millimeter-Wave Bandpass Filters Using On-Chip Dual-Mode Resonators in 0.13- \mu m SiGe BiCMOS TechnologyLiu, Yiqun ; Xu, Kai-DaIEEE transactions on microwave theory and techniques, 2023-08, Vol.71 (8), p.1-11 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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A Simulation Study of SiGe Shell Channel CFET for Sub-2-nm Technology NodesShi, Xinlong ; Liu, Tao ; Wang, Ying ; Chen, Rui ; Zhang, Ningning ; Xu, Min ; Wang, Liming ; Hu, HuiyongIEEE transactions on electron devices, 2023-03, Vol.70 (3), p.908-913 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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A 117.5-155-GHz SiGe ×12 Frequency Multiplier Chain With Push-Push Doublers and a Gilbert Cell-Based TriplerRomstadt, Justin ; Zaben, Ahmad ; Papurcu, Hakan ; Stadler, Pascal ; Welling, Tobias ; Aufinger, Klaus ; Pohl, NilsIEEE journal of solid-state circuits, 2023-09, Vol.58 (9), p.2430-2440 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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A SiGe-Based 240-GHz FMCW Radar System for High-Resolution MeasurementsThomas, Sven ; Bredendiek, Christian ; Pohl, NilsIEEE transactions on microwave theory and techniques, 2019-11, Vol.67 (11), p.4599-4609 [Periódico revisado por pares]New York: IEEETexto completo disponível |