Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Consistent set of band parameters for the group-III nitrides AlN, GaN, and InNRinke, Patrick ; Winkelnkemper, M. ; Qteish, A. ; Bimberg, D. ; Neugebauer, J. ; Scheffler, M.Physical review. B, Condensed matter and materials physics, 2008-02, Vol.77 (7), Article 075202 [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theoryRinke, P ; Scheffler, M ; Qteish, A ; Winkelnkemper, M ; Bimberg, D ; Neugebauer, JApplied physics letters, 2006-10, Vol.89 (16), p.161919-161919-3 [Periódico revisado por pares]American Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Band parameters and strain effects in ZnO and group-III nitridesYan, Qimin ; Rinke, Patrick ; Winkelnkemper, M ; Qteish, A ; Bimberg, D ; Scheffler, Matthias ; Van de Walle, Chris GSemiconductor science and technology, 2011-01, Vol.26 (1), p.014037 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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4 |
Material Type: Artigo
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Self-interaction-corrected local density approximation pseudopotential calculations of the structural phase transformations of ZnO and ZnS under high pressureQteish, AJournal of physics. Condensed matter, 2000-07, Vol.12 (26), p.5639-5653 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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Role of semicore states in the electronic structure of group-III nitrides : An exact-exchange studyQTEISH, A ; AL-SHARIF, A. I ; FUCHS, M ; SCHEFFLER, M ; BOECK, S ; NEUGEBAUER, JPhysical review. B, Condensed matter and materials physics, 2005-10, Vol.72 (15), p.155317.1-155317.8, Article 155317 [Periódico revisado por pares]Ridge, NY: American Physical SocietyTexto completo disponível |
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6 |
Material Type: Artigo
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Ab initio study of the phase transformations of ZnSe under high pressure: stability of the cinnabar and SC16 phasesQteish, A ; Muñoz, AJournal of physics. Condensed matter, 2000-02, Vol.12 (8), p.1705-1713 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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Combining GW calculations with exact-exchange density-functional theory: an analysis of valence-band photoemission for compound semiconductorsRinke, Patrick ; Qteish, Abdallah ; Neugebauer, Jörg ; Freysoldt, Christoph ; Scheffler, MatthiasNew journal of physics, 2005-05, Vol.7, p.126-126 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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8 |
Material Type: Artigo
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Stability and structural properties of the SC16 phase of ZnS under high pressureQteish, A. ; Parrinello, M.Physical review. B, Condensed matter, 2000-03, Vol.61 (10), p.6521-6524 [Periódico revisado por pares]Sem texto completo |
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9 |
Material Type: Artigo
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Exact-exchange calculations of the electronic structure of AlN, GaN and InNQteish, A. ; Al-Sharif, A.I. ; Fuchs, M. ; Scheffler, M. ; Boeck, S. ; Neugebauer, J.Computer physics communications, 2005-07, Vol.169 (1), p.28-31 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Stability and Structural Properties of ZnS and ZnSe under High PressureQteish, A. ; Muñoz, A.Physica status solidi. B. Basic research, 2001-01, Vol.223 (2), p.417-422 [Periódico revisado por pares]Berlin: WILEY-VCH Verlag Berlin GmbHTexto completo disponível |