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Material Type: Ata de Congresso
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Epitaxial Al/GaN and Au/GaN junctions on as-grown GaN(0001)1 x 1 surfacesORANI, D ; PICCIN, M ; RUBINI, S ; PELUCCHI, E ; BONANNI, B ; FRANCIOSI, A ; PASSASEO, A ; CINGOLANI, R ; KHAN, APhysica status solidi. A, Applied research, 2005, Vol.202 (5), p.804-807Berlin: Wiley-VCHTexto completo disponível |
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Material Type: Ata de Congresso
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Interdiffusion in W/Si Multilayers with Boron Carbide InterlayersPotdar, Satish ; Gupta, M ; Gupta, A ; Schneider, M ; Stahn, JAIP conference proceedings, 2011, Vol.1349 (1) [Periódico revisado por pares]United StatesSem texto completo |