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Refinado por: Base de dados/Biblioteca: Institute of Physics IOPscience extra remover Nome da Publicação: Nanotechnology remover
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Building a cm² scale CVD graphene-based gas sensor: modelling the kinetic with a three-site adsorption/desorption Langmuir model
Building a cm² scale CVD graphene-based gas sensor: modelling the kinetic with a three-site adsorption/desorption Langmuir model
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Building a cm² scale CVD graphene-based gas sensor: modelling the kinetic with a three-site adsorption/desorption Langmuir model

Malesys, Vincent ; Andrieux-Ledier, Amandine ; Lavenus, Pierre ; Simon, Laurent

Nanotechnology, 2024-04 [Periódico revisado por pares]

Institute of Physics

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2
Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity
Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity
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Tuning electrical and thermal conductivities of the two-dimensional electron gas in AlN/GaN heterostructures by piezoelectricity

Abou-Hamdan, L ; Hamyeh, Sobhe ; Iskandar, A ; Tauk, R ; Brault, J ; Tabbal, M ; Adam, Pierre-Michel ; Kazan, M

Nanotechnology, 2021-03, Vol.32 (11) [Periódico revisado por pares]

Institute of Physics

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3
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction
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Multi-microscopy nanoscale characterization of the doping profile in a hybrid Mg/Ge-doped tunnel junction

Di Russo, E ; Mavel, A ; Fan Arcara, V ; Damilano, B ; Dimkou, Ioanna ; Vézian, S ; Grenier, A ; Veillerot, M ; Rochat, N ; Feuillet, G ; Bonef, B ; Rigutti, L ; Duboz, J-y ; Monroy, E ; Cooper, D

Nanotechnology, 2020-11, Vol.31 (46) [Periódico revisado por pares]

Institute of Physics

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4
Charge transfers and charged defects in WSe 2 /graphene-SiC interfaces
Charge transfers and charged defects in WSe 2 /graphene-SiC interfaces
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Charge transfers and charged defects in WSe 2 /graphene-SiC interfaces

Dappe, Y J ; Almadori, Y ; Dau, M T ; Vergnaud, C ; Jamet, M ; Paillet, C ; Journot, T ; Hyot, B ; Pochet, P ; Grévin, B

Nanotechnology, 2020-04, Vol.31 (25), p.255709 [Periódico revisado por pares]

England: Institute of Physics

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5
Temperature dependence of photoluminescence lifetime of atomically-thin WSe 2 layer
Temperature dependence of photoluminescence lifetime of atomically-thin WSe 2 layer
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Temperature dependence of photoluminescence lifetime of atomically-thin WSe 2 layer

Łopion, A ; Goryca, M ; Smoleński, T ; Oreszczuk, K ; Nogajewski, K ; Molas, M R ; Potemski, M ; Kossacki, P

Nanotechnology, 2020-03, Vol.31 (13), p.135002 [Periódico revisado por pares]

England: Institute of Physics

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6
Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate
Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate
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Kinetic study of hydrogen lateral diffusion at high temperature in a directly-bonded InP-SiO 2 /Si substrate

Besancon, C ; Fournel, F ; Sanchez, L ; Vaissiere, N ; Dupré, C ; Le Goec, J-P ; Muffato, V ; Jany, C ; Bassani, F ; David, S ; Baron, T ; Decobert, J

Nanotechnology, 2020-03, Vol.31 (13), p.135205 [Periódico revisado por pares]

England: Institute of Physics

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7
Local heat generated by a Foccussed He+ ion beam
Local heat generated by a Foccussed He+ ion beam
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Local heat generated by a Foccussed He+ ion beam

Sakurai, Makoto ; Nagano, Shoko ; Joachim, Christian

Nanotechnology, 2020 [Periódico revisado por pares]

Institute of Physics

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8
Differently shaped nanocrystalline (Fe, Y) 3 O 4 and its adsorption efficiency toward inorganic arsenic species
Differently shaped nanocrystalline (Fe, Y) 3 O 4 and its adsorption efficiency toward inorganic arsenic species
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Differently shaped nanocrystalline (Fe, Y) 3 O 4 and its adsorption efficiency toward inorganic arsenic species

Dojčinović, Biljana P ; Jančar, Boštjan ; Bessais, Lotfi ; Kremenović, Aleksandar S ; Jović-Jovičić, Nataša P ; Banković, Predrag T ; Stanković, Dalibor M ; Ognjanović, Miloš ; Antić, Bratislav V

Nanotechnology, 2019-11, Vol.30 (47), p.475702 [Periódico revisado por pares]

Institute of Physics

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9
Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques
Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques
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Investigation of GaN nanowires containing AlN/GaN multiple quantum discs by EBIC and CL techniques

Piazza, Valerio ; Babichev, Andrey ; Mancini, Lorenzo ; Morassi, Martina ; Quach, Patrick ; Bayle, Fabien ; Largeau, Ludovic ; Julien, François ; Rale, Pierre ; Collin, Stéphane ; Harmand, Jean-Christophe ; Gogneau, Noelle ; Tchernycheva, Maria

Nanotechnology, 2019-05, Vol.30 (21) [Periódico revisado por pares]

Institute of Physics

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10
Forces and electronic transport in a contact formed by a graphene tip and a defective MoS 2 monolayer: a theoretical study
Forces and electronic transport in a contact formed by a graphene tip and a defective MoS 2 monolayer: a theoretical study
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Forces and electronic transport in a contact formed by a graphene tip and a defective MoS 2 monolayer: a theoretical study

di Felice, D ; Dappe, Y J ; González, C

Nanotechnology, 2018-06, Vol.29 (22), p.225704 [Periódico revisado por pares]

England: Institute of Physics

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