Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Gallium nitride devices for power electronic applicationsBaliga, B JayantSemiconductor science and technology, 2013-07, Vol.28 (7), p.74011 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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2 |
Material Type: Artigo
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Merits of gallium nitride based power conversion: Gallium nitride electronicsSCOTT, Mark J ; LIXING FU ; XUAN ZHANG ; JINZHU LI ; CHENGCHENG YAO ; SIEVERS, Markus ; JIN WANGSemiconductor science and technology, 2013, Vol.28 (7) [Periódico revisado por pares]Bristol: Institute of PhysicsTexto completo disponível |
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3 |
Material Type: Artigo
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Gallium nitride devices for power electronic applications: Gallium nitride electronicsJAYANT BALIGA, BSemiconductor science and technology, 2013, Vol.28 (7) [Periódico revisado por pares]Bristol: Institute of PhysicsTexto completo disponível |
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4 |
Material Type: Artigo
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A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communicationsRajbhandari, Sujan ; McKendry, Jonathan J D ; Herrnsdorf, Johannes ; Chun, Hyunchae ; Faulkner, Grahame ; Haas, Harald ; Watson, Ian M ; O'Brien, Dominic ; Dawson, Martin DSemiconductor science and technology, 2017-01, Vol.32 (2), p.23001 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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Current status and scope of gallium nitride-based vertical transistors for high-power electronics application: Gallium nitride electronicsCHOWDHURY, Srabanti ; SWENSON, Brian L ; MAN HOI WONG ; MISHRA, Umesh KSemiconductor science and technology, 2013, Vol.28 (7) [Periódico revisado por pares]Bristol: Institute of PhysicsTexto completo disponível |
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6 |
Material Type: Artigo
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Properties of N-polar InGaN/GaN quantum wells grown with triethyl gallium and triethyl indium as precursorsLund, Cory ; Nakamura, Shuji ; DenBaars, Steven P ; Mishra, Umesh K ; Keller, StaciaSemiconductor science and technology, 2019-07, Vol.34 (7), p.75017 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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7 |
Material Type: Artigo
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Gallium nitride electronicsRAJAN, Siddharth ; JENA, DebdeepSemiconductor science and technology, 2013-07, Vol.28 (7), p.70301 [Periódico revisado por pares]Bristol: Institute of PhysicsTexto completo disponível |
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8 |
Material Type: Artigo
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Merits of gallium nitride based power conversionScott, Mark J ; Fu, Lixing ; Zhang, Xuan ; Li, Jinzhu ; Yao, Chengcheng ; Sievers, Markus ; Wang, JinSemiconductor science and technology, 2013-07, Vol.28 (7), p.74013 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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Current status and scope of gallium nitride-based vertical transistors for high-power electronics applicationChowdhury, Srabanti ; Swenson, Brian L ; Wong, Man Hoi ; Mishra, Umesh KSemiconductor science and technology, 2013-07, Vol.28 (7), p.74014 [Periódico revisado por pares]Texto completo disponível |
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10 |
Material Type: Artigo
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Fabrication of relaxed InGaN pseudo-substrates composed of micron-sized pattern arrays with high fill factors using porous GaNPasayat, Shubhra S ; Gupta, Chirag ; Acker-James, Dillon ; Cohen, Daniel A ; DenBaars, Steven P ; Nakamura, Shuji ; Keller, Stacia ; Mishra, Umesh KSemiconductor science and technology, 2019-11, Vol.34 (11), p.115020 [Periódico revisado por pares]IOP PublishingTexto completo disponível |