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1
Issues in nuclear waste isolation research
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Ata de Congresso
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Issues in nuclear waste isolation research

DELAGE, Pierre ; YU JUN CUI

Engineering geology, 2005, Vol.81 (3) [Periódico revisado por pares]

Amsterdam: Elsevier

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2
Comparative study of argon and hydrogen/helium plasma treatments on the properties of Cu/SiLK damascene structures for interconnect technology
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Ata de Congresso
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Comparative study of argon and hydrogen/helium plasma treatments on the properties of Cu/SiLK damascene structures for interconnect technology

LI, C. Y ; ZHANG, D. H ; SU, S. S ; LU, P. W ; HE, X ; JIA, G. J ; CHEN, Zhe ; WU, S. Y ; KUMAR, Rakesh

Thin solid films, 2004, Vol.462-63, p.172-175 [Periódico revisado por pares]

Lausanne: Elsevier Science

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3
Development and reliability of non-conductive adhesive flip-chip packages
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Ata de Congresso
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Development and reliability of non-conductive adhesive flip-chip packages

TEH, L. K ; ANTO, E ; WONG, C. C ; MHAISALKAR, S. G ; WONG, E. H ; TEO, P. S ; CHEN, Z

Thin solid films, 2004, Vol.462-63, p.446-453 [Periódico revisado por pares]

Lausanne: Elsevier Science

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4
Effect of post-reflow cooling rate on intermetallic compound formation between Sn-3.5 Ag solder and Ni-P under bump metallization
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Ata de Congresso
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Effect of post-reflow cooling rate on intermetallic compound formation between Sn-3.5 Ag solder and Ni-P under bump metallization

HE, Min ; CHEN, Zhong ; QI, Guojun ; WONG, C. C ; MHAISALKAR, S. G

Thin solid films, 2004, Vol.462-63, p.363-369 [Periódico revisado por pares]

Lausanne: Elsevier Science

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5
Impact of barrier metal on electrical performance of Cu/low K (Black Diamond) in 0.13-μm dual damascene interconnection
Material Type:
Ata de Congresso
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Impact of barrier metal on electrical performance of Cu/low K (Black Diamond) in 0.13-μm dual damascene interconnection

LI, H. Y ; LI, C. Y ; SU, Y. J ; TSANG, C. F

Thin solid films, 2004, Vol.462-63, p.245-249 [Periódico revisado por pares]

Lausanne: Elsevier Science

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6
Copper surface protection with a completely enclosed copper structure for a damascene process
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Copper surface protection with a completely enclosed copper structure for a damascene process

WANG, T. C ; HSIEH, T. E ; WANG, Y. L ; WU, Y. L ; LO, K. Y ; LIU, C. W ; CHEN, K. W

Thin solid films, 2004, Vol.447-48, p.542-548 [Periódico revisado por pares]

Lausanne: Elsevier Science

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7
Alpha radiation sources in low alpha materials and implications for low alpha materials refinement
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Alpha radiation sources in low alpha materials and implications for low alpha materials refinement

CLARK, Brett M ; WEISER, Martin W ; RASIAH, Ignatius J

Thin solid films, 2004, Vol.462-63, p.384-386 [Periódico revisado por pares]

Lausanne: Elsevier Science

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8
CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications
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CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications

CHANG, T. C ; TSAI, T. M ; LIU, P. T ; CHEN, C. W ; YAN, S. T ; AOKI, H ; CHANGE, Y. C ; TSENG, T. Y

Thin solid films, 2004, Vol.447-48, p.524-530 [Periódico revisado por pares]

Lausanne: Elsevier Science

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9
Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect
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Evaluation of advanced chemical mechanical planarization techniques for copper damascene interconnect

CHEN, K. W ; WANG, Y. L ; LIU, C. P ; YANG, Kevin ; CHANG, L ; LO, K. Y ; LIU, C. W

Thin solid films, 2004, Vol.447-48, p.531-536 [Periódico revisado por pares]

Lausanne: Elsevier Science

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10
Effect of surface treatment on dielectric leakage and breakdown of copper damascene interconnects
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Effect of surface treatment on dielectric leakage and breakdown of copper damascene interconnects

NGWAN, V. C ; CHUNXIANG ZHU ; KRISHNAMOORTHY, Ahila

Thin solid films, 2004, Vol.462-63, p.321-324 [Periódico revisado por pares]

Lausanne: Elsevier Science

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