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Refinado por: assunto: Engineering remover Nome da Publicação: IEEE Transactions on Electron Devices remover
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Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors
Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors
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Effect of Channel Thickness on Performance of Ultra-Thin Body IGZO Field-Effect Transistors

Kim, Min Jae ; Park, Hyeong Jin ; Yoo, Sungwon ; Cho, Min Hee ; Jeong, Jae Kyeong

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2409-2416 [Periódico revisado por pares]

New York: IEEE

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2
BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs
BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs
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BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs

Dasgupta, Avirup ; Parihar, Shivendra Singh ; Kushwaha, Pragya ; Agarwal, Harshit ; Kao, Ming-Yen ; Salahuddin, Sayeef ; Chauhan, Yogesh Singh ; Hu, Chenming

IEEE transactions on electron devices, 2020-02, Vol.67 (2), p.730-737 [Periódico revisado por pares]

New York: IEEE

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3
Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge
Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge
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Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge

Yujiao Ruan ; Chengzhao Chen ; Shihao Huang ; Wei Huang ; Songyan Chen ; Cheng Li ; Jun Li

IEEE transactions on electron devices, 2013-11, Vol.60 (11), p.3741-3745 [Periódico revisado por pares]

New York, NY: IEEE

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4
Convolutional Machine Learning Method for Accelerating Nonequilibrium Green's Function Simulations in Nanosheet Transistor
Convolutional Machine Learning Method for Accelerating Nonequilibrium Green's Function Simulations in Nanosheet Transistor
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Convolutional Machine Learning Method for Accelerating Nonequilibrium Green's Function Simulations in Nanosheet Transistor

Aleksandrov, Preslav ; Rezaei, Ali ; Dutta, Tapas ; Xeni, Nikolas ; Asenov, Asen ; Georgiev, Vihar

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-6 [Periódico revisado por pares]

New York: IEEE

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5
Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration
Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration
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Si Interlayers Trimming Strategy in Gate-All-Around Device Architecture for Si and SiGe Dual-Channel CMOS Integration

Zhao, Fei ; Li, Yan ; Li, Yongliang ; Jia, Xiaofeng ; Xiong, Wenjuan ; Kong, Zhenzhen ; Luo, Huaizhi ; Li, Junjie ; Zhang, Jiayi ; Mao, Xiaotong ; Wu, Zhenhua ; Xu, Min ; Luo, Jun ; Wang, Wenwu

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6163-6168 [Periódico revisado por pares]

New York: IEEE

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6
Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior
Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior
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Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior

Pahwa, Girish ; Agarwal, Amit ; Chauhan, Yogesh Singh

IEEE transactions on electron devices, 2019-03, Vol.66 (3), p.1591-1598 [Periódico revisado por pares]

New York: IEEE

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7
Negative Capacitance Gate-All-Around Tunnel FETs for Highly Sensitive Label-Free Biosensors
Negative Capacitance Gate-All-Around Tunnel FETs for Highly Sensitive Label-Free Biosensors
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Negative Capacitance Gate-All-Around Tunnel FETs for Highly Sensitive Label-Free Biosensors

Sakib, Fahimul Islam ; Hasan, Md. Azizul ; Hossain, Mainul

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.311-317 [Periódico revisado por pares]

New York: IEEE

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8
The Role of Interface Trap States in MoS2-FET Performance: A Full Quantum Mechanical Simulation Study
The Role of Interface Trap States in MoS2-FET Performance: A Full Quantum Mechanical Simulation Study
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The Role of Interface Trap States in MoS2-FET Performance: A Full Quantum Mechanical Simulation Study

Rawat, Akhilesh ; Rawat, Brajesh

IEEE transactions on electron devices, 2023-09, Vol.70 (9), p.1-8 [Periódico revisado por pares]

New York: IEEE

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9
Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study
Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study
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Impact of the Figures of Merit (FoMs) Definitions on the Variability in Nanowire TFET: NEGF Simulation Study

Guan, Yunhe ; Georgiev, Vihar P. ; Asenov, Asen ; Liang, Feng ; Chen, Haifeng

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.1-6 [Periódico revisado por pares]

New York: IEEE

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10
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory
Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory
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Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part I: Theory

Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Waltl, Michael ; Grasser, Tibor

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6365-6371 [Periódico revisado por pares]

New York: IEEE

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