Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Highly stretchable and sensitive silicone composites with positive piezoconductivity using nickel powder and ionic liquidMatsuda, R. ; Isano, Y. ; Ueno, K. ; Ota, H.APL bioengineering, 2023-03, Vol.7 (1), p.016108-016108 [Periódico revisado por pares]United States: AIP Publishing LLCTexto completo disponível |
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2 |
Material Type: Artigo
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An Unconditionally Stable Three-Stage OTAAminzadeh, H. ; Ballo, A. ; Valinezhad, M. ; Grasso, A. D.IEEE solid-state circuits letters, 2022, Vol.5, p.1-1 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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3 |
Material Type: Artigo
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Pyrolysis Kinetics of Newspaper and Its GasificationBhuiyan, M. N. A. ; Ota, M. ; Murakami, K. ; Yoshida, H.Energy sources. Part A, Recovery, utilization, and environmental effects, 2010-01, Vol.32 (2), p.108-118 [Periódico revisado por pares]Taylor & Francis GroupTexto completo disponível |
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4 |
Material Type: Artigo
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Battery Maintenance of Pedelec Sharing System: Big Data Based Usage Prediction and Replenishment SchedulingZhang, Chaofeng ; Dong, Mianxiong ; Luan, Tom H. ; Ota, KaoruIEEE transactions on network science and engineering, 2020-01, Vol.7 (1), p.127-138 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Evaluation with Surface Analysis Equipment, of Casting Defects in Cast Iron Articles (review)Kambayashi, H. ; Kurokawa, Y. ; Ota, H. ; Hoshiyama, Yasuhiro ; Miyake, HidekazuMaterials science forum, 2007-03, Vol.539-543, p.1110-1115 [Periódico revisado por pares]Sem texto completo |
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6 |
Material Type: Artigo
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Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistorsMizubayashi, W. ; Fukuda, K. ; Mori, T. ; Endo, K. ; Liu, Y.X. ; Matsukawa, T. ; O’uchi, S. ; Ishikawa, Y. ; Migita, S. ; Morita, Y. ; Tanabe, A. ; Tsukada, J. ; Yamauchi, H. ; Masahara, M. ; Ota, H.Solid-state electronics, 2015-09, Vol.111, p.62-66 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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7 |
Material Type: Artigo
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Advantages of HfAlON gate dielectric film for advanced low power CMOS applicationToriumi, A. ; Iwamoto, K. ; Ota, H. ; Kadoshima, M. ; Mizubayashi, W. ; Nabatame, T. ; Ogawa, A. ; Tominaga, K. ; Horikawa, T. ; Satake, H.Microelectronic engineering, 2005-06, Vol.80, p.190-197 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Preparation and mechanical properties of polylactic acid composites containing hydroxyapatite fibersKasuga, Toshihiro ; Ota, Yoshio ; Nogami, Masayuki ; Abe, YoshihiroBiomaterials, 2001-01, Vol.22 (1), p.19-23 [Periódico revisado por pares]Oxford: Elsevier LtdTexto completo disponível |
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9 |
Material Type: Artigo
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Visualization of Poynting Vectors by Using Electro-Optic Probes for Electromagnetic FieldsSuzuki, E. ; Arakawa, S. ; Takahashi, M. ; Ota, H. ; Arai, K.I. ; Sato, R.IEEE transactions on instrumentation and measurement, 2008-05, Vol.57 (5), p.1014-1022 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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10 |
Material Type: Artigo
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0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrateOGAWA, A ; IWAMOTO, K ; OTA, H ; MORITA, Y ; IKEDA, M ; NABATAME, T ; TORIUMI, AMicroelectronic engineering, 2007-09, Vol.84 (9-10), p.1861-1864 [Periódico revisado por pares]Amsterdam: Elsevier ScienceTexto completo disponível |