Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: magazinearticle
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DiamondMoyer, MichaelScientific American, 2009-09, Vol.301 (3), p.87-87New York: Scientific American, IncorporatedTexto completo disponível |
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2 |
Material Type: magazinearticle
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Diamond PlanetsMatson, JohnScientific American, 2013-01, Vol.308 (1), p.12-13United States: Scientific American, IncorporatedTexto completo disponível |
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3 |
Material Type: magazinearticle
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Hydroformylation’s Diamond JubileeRitter, Stephen KChemical & Engineering News, 2013-04, Vol.91 (16), p.38-40Washington: American Chemical SocietyTexto completo disponível |
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4 |
Material Type: magazinearticle
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Improving MOSFETs' TID Tolerance Through Diamond Layout StyleSeixas, L. E. ; Goncalez, O. L. ; Souza, R. ; Finco, S. ; Vaz, R. G. ; da Silva, G. A. ; Gimenez, S. P.IEEE transactions on device and materials reliability, 2017-09, Vol.17 (3), p.593-595 [Periódico revisado por pares]IEEETexto completo disponível |
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5 |
Material Type: magazinearticle
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Diamond lifeForrest, MichaelMaterials world, 2006-08, Vol.14 (8), p.25-27London: Taylor & Francis LtdTexto completo disponível |
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6 |
Material Type: magazinearticle
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Diamond firstParfitt, AnthonyProfessional engineering, 2008-11, Vol.21 (20), p.19Caspian Publishing LtdTexto completo disponível |
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7 |
Material Type: magazinearticle
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Diamond whiskyChampion, PaulNew scientist (1971), 2008-08, Vol.199 (2667), p.23-23Texto completo disponível |
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8 |
Material Type: magazinearticle
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Explosive DiamondsCorfield, RichardChemistry and industry (London), 2016, Vol.80 (2), p.32-35London: Blackwell Publishing LtdTexto completo disponível |
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9 |
Material Type: magazinearticle
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Materials with the diamond touch. (diamond's remarkable properties and new diamond-making technologies; includes sidebar on diamond makers of the past)Simpson, MikeNew scientist (1971), 1988-03, Vol.117 (1603), p.50-52New Scientist LtdTexto completo disponível |
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10 |
Material Type: magazinearticle
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Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF ElectronicsLu, Mei-ChienIEEE transactions on device and materials reliability, 2023-12, Vol.23 (4), p.468-485 [Periódico revisado por pares]IEEETexto completo disponível |