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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: magazinearticle
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Time-Dependent Dielectric Breakdown on Subnanometer EOT nMOS FinFETsFeijoo, P. C. ; Kauerauf, T. ; Toledano-Luque, M. ; Togo, M. ; San Andres, Enrique ; Groeseneken, G.IEEE transactions on device and materials reliability, 2012-03, Vol.12 (1), p.166-170 [Peer Reviewed Journal]New York: IEEEFull text available |
| 2 |
Material Type: magazinearticle
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Accurate High Temperature Measurements Using Local Polysilicon Heater StructuresPobegen, Gregor ; Nelhiebel, Michael ; de Filippis, Stefano ; Grasser, TiborIEEE transactions on device and materials reliability, 2014-03, Vol.14 (1), p.169-176 [Peer Reviewed Journal]New York: IEEEFull text available |
| 3 |
Material Type: magazinearticle
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CMOS Reliability From Past to Future: A Survey of Requirements, Trends, and Prediction MethodsHill, Ian ; Chanawala, Parvez ; Singh, Rohit ; Sheikholeslam, S. Arash ; Ivanov, AndreIEEE transactions on device and materials reliability, 2022-03, Vol.22 (1), p.1-18 [Peer Reviewed Journal]New York: IEEEFull text available |
| 4 |
Material Type: magazinearticle
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Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS TransistorsWaltl, MichaelIEEE transactions on device and materials reliability, 2020-06, Vol.20 (2), p.242-250 [Peer Reviewed Journal]IEEEFull text available |
| 5 |
Material Type: magazinearticle
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Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate StacksKerber, A. ; Cartier, E.A.IEEE transactions on device and materials reliability, 2009-06, Vol.9 (2), p.147-162 [Peer Reviewed Journal]New York: IEEEFull text available |
| 6 |
Material Type: magazinearticle
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The Impact of BTI Variations on Timing in Digital Logic CircuitsJianxin Fang ; Sapatnekar, S. S.IEEE transactions on device and materials reliability, 2013-03, Vol.13 (1), p.277-286 [Peer Reviewed Journal]IEEEFull text available |
| 7 |
Material Type: magazinearticle
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Atomistic Pseudo-Transient BTI Simulation With Inherent Workload MemoryRodopoulos, Dimitrios ; Weckx, Pieter ; Noltsis, Michail ; Catthoor, Francky ; Soudris, DimitriosIEEE transactions on device and materials reliability, 2014-06, Vol.14 (2), p.704-714 [Peer Reviewed Journal]New York: IEEEFull text available |
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