Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDBai, J. ; Wang, T. ; Li, H.D. ; Jiang, N. ; Sakai, S.Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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[001]-oriented crystalline Potassium-Sodium Niobate thin film fabricated at low temperature for use in piezoelectric energy harvesterKim, Jong-Hyun ; Woo, Jong-Un ; Yee, Yeon-Jeong ; Kim, In-Su ; Shin, Ho-Sung ; Hwang, Hyun-Gyu ; Kweon, Sang Hyo ; Choi, Hyun-Ju ; Nahm, SahnApplied surface science, 2021-01, Vol.537, p.147871, Article 147871 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAMATSUBARA, Y ; SAKAI, T ; ISHIGAMI, T ; ANDO, K ; HORIUCHI, TThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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4 |
Material Type: Ata de Congresso
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0.12 /spl mu/m Optical Lithography Performance Using an Alternating DUV Phase Shift MaskTrouiller, Y. ; Buffet, N. ; Mourier, T. ; Schiavone, P. ; Quere, Y.Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135), 1998, p.77-80IEEETexto completo disponível |
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5 |
Material Type: Ata de Congresso
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0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masksChen, Yung-Tin ; Lin, Chia-Hui ; Lin, Hua Tai ; Hsieh, Hung-Chang ; Yu, Shinn Sheng ; Yen, AnthonySPIE 2000Texto completo disponível |
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6 |
Material Type: Report
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0.25-in. FISSION CHAMBER WITH CADMIUM SLEEVESalmon, P.G.Canada 1960Sem texto completo |
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7 |
Material Type: Artigo
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0.25 μm trilevel lithography using KTI 747 negative resist for the planarizing layerKUNG, E. H ; TIMKO, A. GJournal of the Electrochemical Society, 1990-11, Vol.137 (11), p.3568-3573 [Periódico revisado por pares]Pennington, NJ: Electrochemical SocietyTexto completo disponível |
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8 |
Material Type: Artigo
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0.3 Å Makes the Difference: Dramatic Changes in Methanol-to-Olefin Activities between H-ZSM-12 and H-ZSM-22 ZeolitesWang, Qiong ; Cui, Zhi-Min ; Cao, Chang-Yan ; Song, Wei-GuoJournal of physical chemistry. C, 2011-12, Vol.115 (50), p.24987-24992 [Periódico revisado por pares]American Chemical SocietyTexto completo disponível |
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9 |
Material Type: Ata de Congresso
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0.32-μm pitch random line pattern formation by dense dummy pattern and double exposure in KrF wavelengthNakao, Shuji ; Tsujita, Kouichirou ; Arimoto, Ichiriou ; Wakamiya, WataruSPIE 2000Texto completo disponível |
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10 |
Material Type: Artigo
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0.3C–CrMoV(ESR) Steel: A New Ultrahigh Strength SteelSuresh, M. R.Transactions of the Indian Institute of Metals, 2011-10, Vol.64 (4-5), p.483-492India: Springer-VerlagTexto completo disponível |