Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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(0 0 0 1) oriented GaN epilayer grown on [formula omitted] sapphire by MOCVDBai, J. ; Wang, T. ; Li, H.D. ; Jiang, N. ; Sakai, S.Journal of crystal growth, 2001-09, Vol.231 (1), p.41-47 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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0. 98 [mu]m InGaAs-InGaAsP-InGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiberOhkubo, Michio ; Namiki, Shu ; Ijichi, Tetsuro ; Iketani, Akira ; Kikuta, ToshioIEEE journal of quantum electronics, 1993-06, Vol.29:6 [Periódico revisado por pares]United StatesTexto completo disponível |
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3 |
Material Type: Ata de Congresso
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(001)-Oriented LaNiO3 Bottom Electrodes and (001)-Textured Ferroelectric Thin Films on LaNiO3Zhang, Zhenshan ; Park, Jeong Hwan ; Trolier-McKinstry, SusanMRS proceedings, 2000, Vol.596New York, USA: Cambridge University PressSem texto completo |
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4 |
Material Type: Artigo
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(001)-oriented PbTiO3 ferroelectric thin films grown on Si by metal-organic chemical vapour depositionMa, Wen-Hui ; Zhang, Ming-Sheng ; Shun, Li ; Chen, Yang-Feng ; Ming, Nai-BenJournal of physics. Condensed matter, 1995-11, Vol.7 (47), p.9075-9080 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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5 |
Material Type: Artigo
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(001) Surfaces of GaP and InP: structural motifs, electronic states and optical signaturesSchmidt, W.G. ; Bernholc, J. ; Bechstedt, F.Applied surface science, 2000-10, Vol.166 (1), p.179-184 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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(001)-textured growth of diamond films on polycrystalline diamond substrates by bias-assisted chemical vapor depositionZhang, W.J. ; Jiang, X. ; Klages, C.-P.Journal of crystal growth, 1997-02, Vol.171 (3), p.485-492 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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(001) textured PbTiO3 thin films grown on redoping n-Si by metalorganic chemical vapor deposition under reduced pressureSUN, L ; CHEN, Y.-F ; YU, T ; MING, N.-B ; DING, D.-S ; LU, Z.-HApplied physics. A, Materials science & processing, 1996-10, Vol.63 (4), p.381-384 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |
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8 |
Material Type: Artigo
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0.10 μm TiSi2 technology utilizing nitrogen diffusion controlled RTAMATSUBARA, Y ; SAKAI, T ; ISHIGAMI, T ; ANDO, K ; HORIUCHI, TThin solid films, 1995-12, Vol.270 (1-2), p.537-543 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
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9 |
Material Type: Ata de Congresso
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0.12 /spl mu/m Optical Lithography Performance Using an Alternating DUV Phase Shift MaskTrouiller, Y. ; Buffet, N. ; Mourier, T. ; Schiavone, P. ; Quere, Y.Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135), 1998, p.77-80IEEETexto completo disponível |
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10 |
Material Type: Ata de Congresso
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0.13-μm optical lithography for random logic devices using 248-nm attenuated phase-shifting masksChen, Yung-Tin ; Lin, Chia-Hui ; Lin, Hua Tai ; Hsieh, Hung-Chang ; Yu, Shinn Sheng ; Yen, AnthonySPIE 2000Texto completo disponível |