Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
1 |
Material Type: Recurso Textual
|
Electronic structure and properties of isoelectronic magic clusters: Al13X (X=H,Au,Li,Na,K,Rb,Cs)Ko, Yeon Jae ; Shakya, Anisha ; Wang, Haopeng ; Grubisic, Andrej ; Zheng, Weijun ; Gotz, Matthias ; Gantefor, Gerd ; Bowen, Kit H ; Jena, Puru ; Kiran, BoggavarapuVCU Scholars Compass 2010Texto completo disponível |
|
2 |
Material Type: Recurso Textual
|
The effect of stair case electron injector design on electron overflow in InGaN light emitting diodesZhang, F ; Li, X ; Hafiz, S ; Okur, S ; Avrutin, Vitaliy ; Ozgur, U ; Morkoç, Hadis ; Matulionis, AVCU Scholars Compass 2013Texto completo disponível |
|
3 |
Material Type: Recurso Textual
|
Determination of the thermal parameters of a clay from heating cell testsRomero Morales, Enrique Edgar ; Lima Amorim, Analice França ; Gens Solé, Antonio ; Vaunat, Jean ; Li, X. L2013Texto completo disponível |
|
4 |
Material Type: Recurso Textual
|
Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effectsKayis, C ; Ferreyra, Romualdo A ; Wu, M ; Li, X ; Özgür, Ü ; Matulionis, A ; Morkoç, HadisVCU Scholars Compass 2011Texto completo disponível |
|
5 |
Material Type: Recurso Textual
|
Analysis of the excavation of a deep drift in a tertiary clayVaunat, Jean ; Gens Solé, Antonio ; de Vasconcelos, R ; Li, X.-LInternational Centre for Computational Engineering 2011Texto completo disponível |
|
6 |
Material Type: Recurso Textual
|
Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise techniqueKayis, Cemil ; Zhu, C. Y ; Wu, Mo ; Li, X ; Özgür, Ümit ; Morkoç, HadisVCU Scholars Compass 2011Texto completo disponível |
|
7 |
Material Type: Recurso Textual
|
Hot electron effects on efficiency degradation in InGaN light emitting diodes and designs to mitigate themNi, X ; Li, X ; Lee, J ; Liu, S ; Avrutin, V ; Özgür, Ü ; Morkoç, H ; Matulionis, AVCU Scholars Compass 2010Texto completo disponível |
|
8 |
Material Type: Recurso Textual
|
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regionsLi, X ; Okur, Serdal ; Zhang, F ; Hafiz, S. A ; Avrutin, Vitaliy ; Ozgur, Umit ; Morkoç, Hadis ; Jarašiūnas, KVCU Scholars Compass 2012Texto completo disponível |
|
9 |
Material Type: Recurso Textual
|
Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor depositionNi, X ; Wu, M ; Lee, J ; Li, X ; Baski, A. A ; Özgür, Ü ; Morkoç, HadisVCU Scholars Compass 2009Texto completo disponível |
|
10 |
Material Type: Recurso Textual
|
Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effectsZhu, C. Y ; Wu, M ; Kayis, C ; Zhang, F ; Li, X ; Ferreyra, R. A ; Matulionis, A ; Avrutin, Vitaliy ; Ozgur, Umit ; Morkoc, HadisVCU Scholars Compass 2012Texto completo disponível |