Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
11 |
Material Type: Artigo
|
Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor StructuresRumyantsev, V. V. ; Maremyanin, K. V. ; Fokin, A. P. ; Dubinov, A. A. ; Utochkin, V. V. ; Glyavin, M. Yu ; Mikhailov, N. N. ; Dvoretskii, S. A. ; Morozov, S. V. ; Gavrilenko, V. I.Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1217-1221 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
12 |
Material Type: Artigo
|
Investigation into Microwave Absorption in Semiconductors for Frequency-Multiplication Devices and Radiation-Output Control of Continuous and Pulsed GyrotronsMaremyanin, K. V. ; Parshin, V. V. ; Serov, E. A. ; Rumyantsev, V. V. ; Kudryavtsev, K. E. ; Dubinov, A. A. ; Fokin, A. P. ; Morosov, S. S. ; Aleshkin, V. Ya ; Glyavin, M. Yu ; Denisov, G. G. ; Morozov, S. V.Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1069-1074 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
13 |
Material Type: Artigo
|
Quantum-Cascade Laser with Radiation Emission through a Textured LayerBabichev, A. V. ; Kolodeznyi, E. S. ; Gladyshev, A.G. ; Denisov, D. V. ; Voznyuk, G. V. ; Mitrofanov, M. I. ; Mikhailov, D. A. ; Chistyakov, D. V. ; Kuritsyn, D. I. ; Dudelev, V. V. ; Slipchenko, S. O. ; Lyutetskii, A. V. ; Evtikhiev, V. P. ; Karachinsky, L. Ya ; Novikov, I. I. ; Morozov, S. V. ; Sokolovskii, G. S. ; Pikhtin, N. A. ; Egorov, A. YuSemiconductors (Woodbury, N.Y.), 2022, Vol.56 (1), p.1-4 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
14 |
Material Type: Artigo
|
On the atomic-force microscopy of biological nanoparticles in airBobrinetskii, I. I. ; Morozov, R. A. ; Chaplygin, E. YuSemiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (13), p.1699-1702 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
|
15 |
Material Type: Artigo
|
GaAs/InGaAsN heterostructures for multi-junction solar cellsNikitina, E. V. ; Gudovskikh, A. S. ; Lazarenko, A. A. ; Pirogov, E. V. ; Sobolev, M. S. ; Zelentsov, K. S. ; Morozov, I. A. ; Egorov, A. YuSemiconductors (Woodbury, N.Y.), 2016-05, Vol.50 (5), p.652-655 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
16 |
Material Type: Artigo
|
Investigation of GaAs/AlGaAs quantum cascade structures by optical methods based on hot luminescence in the near-infrared rangeMaremyanin, K. V. ; Kryzhkov, D. I. ; Morozov, S. V. ; Sergeev, S. M. ; Kuritsyn, D. I. ; Gaponova, D. M. ; Aleshkin, V. Ya ; Sadof’ev, Yu. G.Semiconductors (Woodbury, N.Y.), 2014-11, Vol.48 (11), p.1463-1466 [Periódico revisado por pares]Moscow: Pleiades PublishingTexto completo disponível |
|
17 |
Material Type: Artigo
|
Diagnostics of quantum cascade structures by optical methods in the near infrared regionKryzhkov, D. I. ; Morozov, S. V. ; Gaponova, D. M. ; Sergeev, S. M. ; Kuritsyn, K. I. ; Maremyanin, K. V. ; Gavrilenko, V. I. ; Sadofyev, Yu. G.Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1411-1414 [Periódico revisado por pares]Dordrecht: SP MAIK Nauka/InterperiodicaTexto completo disponível |
|
18 |
Material Type: Artigo
|
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 μmSadofyev, Yu. G. ; Samal, N. ; Andreev, B. A. ; Gavrilenko, V. I. ; Morozov, S. V. ; Spivakov, A. G. ; Yablonsky, A. N.Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.405-412 [Periódico revisado por pares]Dordrecht: SP MAIK Nauka/InterperiodicaTexto completo disponível |
|
19 |
Material Type: Artigo
|
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 µmSadofyev, Yu. G ; Samal, N ; Andreev, B.A ; Gavrilenko, V.I ; Morozov, S.V ; Spivakov, A.G ; Yablonsky, A.NSemiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.405 [Periódico revisado por pares]SpringerTexto completo disponível |
|
20 |
Material Type: Artigo
|
GaAsSb/GaAs strained structures with quantum wells for lasers with emission wavelength near 1.3 {mu}mSadofyev, Yu. G. ; Samal, N. ; Andreev, B. A. ; Gavrilenko, V. I. ; Morozov, S. V. ; Spivakov, A. G. ; Yablonsky, A. N.Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3) [Periódico revisado por pares]United StatesTexto completo disponível |