Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Livro
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Inelastic Ion–Surface CollisionsInternational Workshop on Inelastic Ion-Surface Collisions N. H TolkAcademic Press 1977Acesso online |
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2 |
Material Type: Livro
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Disorption induced by electronic transitions DIET I : proceedings of the First International Workshop, Williamsburg, Virginia, USA, May 12-14, 1982N. H Tolk; M. M Traum; J. C Tully; T. E MadeyBerlin New York Springer-Verlag 1983Localização: CQ - Conjunto das Químicas (541.3453 W926d ) e outros locais(Acessar) |
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3 |
Material Type: Recurso Textual
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Papers presented at the 7th International Conference on Optics of Surfaces and Interfaces (OSI-VII) : Jackson Hole, Wyoming, USA, 15-20 July 2007International Conference on Optics of Surfaces and Interfaces (7th : 2008 : Jackson Hole, Wyoming) Antonio Cricenti; James H Dickerson; N. H Tolk (Norman H.)Weinheim : WILEY-VCH c2008Localização: IF - Instituto de Física (MS PHSSC v.5 n.8 )(Acessar) |
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4 |
Material Type: Artigo
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Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopyKlots, A R ; Newaz, A K M ; Wang, Bin ; Prasai, D ; Krzyzanowska, H ; Lin, Junhao ; Caudel, D ; Ghimire, N J ; Yan, J ; Ivanov, B L ; Velizhanin, K A ; Burger, A ; Mandrus, D G ; Tolk, N H ; Pantelides, S T ; Bolotin, K IScientific reports, 2014-10, Vol.4 (1), p.6608-6608, Article 6608 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
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5 |
Material Type: Artigo
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Investigation of ferroelectric properties and structural relaxation dynamics of polyvinylidene fluoride thin film via second harmonic generationJones, J. ; Zhu, L. ; Tolk, N. ; Mu, R.Applied physics letters, 2013-08, Vol.103 (7) [Periódico revisado por pares]Texto completo disponível |
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6 |
Material Type: Artigo
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Desorption of H from Si(111) by Resonant Excitation of the Si-H Vibrational Stretch ModeLiu, Zhiheng ; Feldman, L. C. ; Tolk, N. H. ; Zhang, Zhenyu ; Cohen, P. I.Science (American Association for the Advancement of Science), 2006-05, Vol.312 (5776), p.1024-1026 [Periódico revisado por pares]Washington, DC: American Association for the Advancement of ScienceTexto completo disponível |
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7 |
Material Type: Livro
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8 |
Material Type: Artigo
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Annealing effect in boron-induced interface charge traps in Si/SiO2 systemsPark, H. ; Choi, B. ; Steigerwald, A. ; Varga, K. ; Tolk, N.Journal of applied physics, 2013-01, Vol.113 (2) [Periódico revisado por pares]Texto completo disponível |
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9 |
Material Type: Artigo
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Semiconductor point defect concentration profiles measured using coherent acoustic phonon wavesSteigerwald, A ; Xu, Y ; Qi, J ; Gregory, J ; Liu, X ; Furdyna, J K ; Varga, K ; Hmelo, A B ; Lüpke, G ; Feldman, L C ; Tolk, NApplied physics letters, 2009-03, Vol.94 (11), p.111910-111910-3 [Periódico revisado por pares]United States: American Institute of PhysicsTexto completo disponível |
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10 |
Material Type: Artigo
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Giant enhancement of hydrogen transport in rutile TiO2 at low temperaturesSpahr, E J ; Wen, L ; Stavola, M ; Boatner, L A ; Feldman, L C ; Tolk, N H ; Lüpke, GPhysical review letters, 2010-05, Vol.104 (20), p.205901-205901 [Periódico revisado por pares]United StatesTexto completo disponível |