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Resultados de 1 a 10 de 49  para Produção Intelectual da USP

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1
Many-electron treatment for chalcogen complexes in silicon
Many-electron treatment for chalcogen complexes in silicon
Material Type:
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Many-electron treatment for chalcogen complexes in silicon

A Fazzio A Antonelli; H Ferreira de Paula Junior; Sylvio Canuto

v.5 , n.3 , p.196-9, 1990 Semiconductor Science and Technology

1990

Item não circula. Consulte sua biblioteca.(Acessar)

2
Photoreflectance spectra from GaAs HEMT structures reinvestigated solution of an old controversy
Photoreflectance spectra from GaAs HEMT structures reinvestigated solution of an old controversy
Material Type:
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Photoreflectance spectra from GaAs HEMT structures reinvestigated solution of an old controversy

J A N T Soares R Enderlein; D Beliaev; J. R Leite (José Roberto); M Saito

Semiconductor Science and Technology London v. 13, n. 12, p. 1418-1425, 1998

London 1998

Item não circula. Consulte sua biblioteca.(Acessar)

3
Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate
Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate
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Micro-raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate

A. Tabata A. P Lima; J. R Leite (José Roberto); V Lemos; D Schikora; B Schottker; U Kohler; D. J As; K Lischka

Semiconductor Science and Technology Bristol v. 14, n. 4, p. 318-322, 1999

Bristol 1999

Item não circula. Consulte sua biblioteca.(Acessar)

4
Anisotropy of the cyclotron mass in superlattices containing two populated minibands
Anisotropy of the cyclotron mass in superlattices containing two populated minibands
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Anisotropy of the cyclotron mass in superlattices containing two populated minibands

André Bohomoletz Henriques P. L Souza; B Yavich

Semiconductor Science and Technology Bristol v. 16, n. 1, p. 1-6, 2001

Bristol 2001

Acesso online

5
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures
New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures
Material Type:
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New theoretical model for optical transitions in the photoreflectance spectrum from 'GHAMA'-doped structures

D Beliaev L M R Scolfaro; J. R Leite (José Roberto)

v.8 , p.1479, 1993 Semiconductor Science and Technology

1993

Item não circula. Consulte sua biblioteca.(Acessar)

6
Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'
Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'
Material Type:
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Miniband structures and effective masses of n-type 'delta'-doping superlattices in 'GaN'

S C P Rodrigues A L Rosa; Luísa Maria Ribeiro Scolfaro; Dmitri Beliaev; J. R Leite (José Roberto); R Enderlein; J L A Alves

Semiconductor Science and Technology v. 13, p. 981-988, 1998

1998

Item não circula. Consulte sua biblioteca.(Acessar)

7
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling
Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling
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Characterization of periodically 'delta'-doped semiconductors by capacitance-voltage profiling

L. C. D. Gonçalves André Bohomoletz Henriques; P. L Souza; B Yavich

Semiconductor Science and Technology Bristol v. 12, p. 1455-1458, 1997

Bristol 1997

Item não circula. Consulte sua biblioteca.(Acessar)

8
Electronic properties of gated 'DELTA'-doped semiconductors
Electronic properties of gated 'DELTA'-doped semiconductors
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Electronic properties of gated 'DELTA'-doped semiconductors

L. C. D. Gonçalves André Bohomoletz Henriques

London v.12, p.203-9, 1997 Semiconductor Science and Technology

London 1997

Item não circula. Consulte sua biblioteca.(Acessar)

9
Doping of silicon with boron by rapid thermal processing
Doping of silicon with boron by rapid thermal processing
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Doping of silicon with boron by rapid thermal processing

J. P. Souza Claus Martin Hasenack; Jacobus Willibrordus Swart 1950-

London v.3 , n.4 , p.277-90, apr. 1988 Semiconductor Science and Technology

London 1988

Item não circula. Consulte sua biblioteca.(Acessar)

10
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy
Material Type:
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Photoluminescence of 'GA' sb grown by metal-organic vapour phase epitaxy

André Bohomoletz Henriques E T R Chidley; S K Haywood; R J Nicholas; N J Mason; P J Walker

v.6 , p.45, 1991 Semiconductor Science and Technology

1991

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Martino, J
  2. Henriques, A
  3. Leite, J
  4. Agopian, P
  5. Gonçalves, L

Neste Assunto:

  1. Matéria Condensada
  2. Semicondutores
  3. Engenharia Mecânica
  4. Microeletrônica
  5. Silício

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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