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1
Structural, electronic, and magnetic properties of La sub x Sr sub 1-x VO sub 3 (0 <= x <= 1. 0)
Structural, electronic, and magnetic properties of La sub x Sr sub 1-x VO sub 3 (0 <= x <= 1. 0)
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Structural, electronic, and magnetic properties of La sub x Sr sub 1-x VO sub 3 (0 <= x <= 1. 0)

Mahajan, A.

United States 1991

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2
Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
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Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment

Mahajan, A ; Irby, J ; KINOSKY, D ; Qian, R ; Thomas, S

Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment, 1992

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3
Si atomic layer epitaxy using remote plasma assisted hydrogen desorption and disilane as a precursor
Si atomic layer epitaxy using remote plasma assisted hydrogen desorption and disilane as a precursor
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Si atomic layer epitaxy using remote plasma assisted hydrogen desorption and disilane as a precursor

Mahajan, A ; KINOSKY, D ; Qian, R ; Thomas, S ; Banerjee, S

Si atomic layer epitaxy using remote plasma assisted hydrogen desorption and disilane as a precursor, 1992

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4
Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
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Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment

Mahajan, A ; Irby, J ; KINOSKY, D ; Qian, R ; Thomas, S

Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment, 1992

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5
A simple controller for repetitive cycles in atomic layer epitaxy
A simple controller for repetitive cycles in atomic layer epitaxy
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A simple controller for repetitive cycles in atomic layer epitaxy

KINOSKY, D ; Mahajan, A ; Qian, R ; Thomas, S ; Banerjee, S

A simple controller for repetitive cycles in atomic layer epitaxy, 1992

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6
Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment
Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment
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Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment

Mahajan, A ; Irby, J ; Kinosky, D ; Qian, R ; Thomas, S ; Banerjee, S ; Tasch, A ; Picraux, Tom

1992

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7
Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor
Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor
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Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor

Mahajan, A ; Kinosky, D ; Qian, R ; Thomas, S ; Banerjee, S ; Tasch, A

1992

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8
A Simple Controller for Repetitive Cycles in Atomic Layer Epitaxy
A Simple Controller for Repetitive Cycles in Atomic Layer Epitaxy
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A Simple Controller for Repetitive Cycles in Atomic Layer Epitaxy

Kinosky, D ; Mahajan, A ; Qian, R ; Thomas, S ; Banerjee, S ; Tasch, A

1992

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9
Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment
Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment
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Si Atomic Layer Epitaxy Based on Si2H6 and Remote He Plasma Bombardment

Mahajan, A ; Irby, J ; Kinosky, D ; Qian, R ; Thomas, S ; Bancerjee, S ; Tasch, A ; Picraux, Tom

1992

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10
Method for measuring the effectiveness of gaseous-contaminant removal filters
Method for measuring the effectiveness of gaseous-contaminant removal filters
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Method for measuring the effectiveness of gaseous-contaminant removal filters

Mahajan, B.M.

United States 1989

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