Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Flexoelectricity in composition-graded InGaN nanowiresZhang, JinJournal of physics. D, Applied physics, 2021-11, Vol.54 (46), p.465101 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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2 |
Material Type: Artigo
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Tunable local and global piezopotential properties of graded InGaN nanowiresZhang, JinNano energy, 2021-08, Vol.86, p.106125, Article 106125 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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3 |
Material Type: Artigo
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Preparing the Way for Doping Wurtzite Silicon Nanowires while Retaining the PhaseFabbri, Filippo ; Rotunno, Enzo ; Lazzarini, Laura ; Cavalcoli, Daniela ; Castaldini, Antonio ; Fukata, Naoki ; Sato, Keisuke ; Salviati, Giancarlo ; Cavallini, AnnaNano letters, 2013-12, Vol.13 (12), p.5900-5906 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
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4 |
Material Type: Artigo
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Small-scale effects on the piezopotential properties of tapered gallium nitride nanowires: The synergy between surface and flexoelectric effectsZhang, JinNano energy, 2021-01, Vol.79, p.105489, Article 105489 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
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5 |
Material Type: Artigo
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Bandgap Energy of Wurtzite InAs NanowiresRota, Michele B ; Ameruddin, Amira S ; Fonseka, H. Aruni ; Gao, Qiang ; Mura, Francesco ; Polimeni, Antonio ; Miriametro, Antonio ; Tan, H. Hoe ; Jagadish, Chennupati ; Capizzi, MarioNano letters, 2016-08, Vol.16 (8), p.5197-5203 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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6 |
Material Type: Artigo
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Polar oscillation and dispersion properties of quasi-confined optical phonon modes in a wurtzite GaN/Al x Ga 1− x N nanowireZhang, Li ; Shi, Jun-JieApplied surface science, 2006-09, Vol.252 (22), p.7815-7822 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP NanowiresTedeschi, D ; De Luca, M ; Granados del Águila, A ; Gao, Q ; Ambrosio, G ; Capizzi, M ; Tan, H. H ; Christianen, P. C. M ; Jagadish, C ; Polimeni, ANano letters, 2016-10, Vol.16 (10), p.6213-6221 [Periódico revisado por pares]United States: American Chemical SocietyTexto completo disponível |
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8 |
Material Type: Artigo
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Raman study of phase transformation from diamond structure to wurtzite structure in the silicon nanowiresShukla, A K ; Dixit, SaurabhJournal of physics. D, Applied physics, 2016-06, Vol.49 (28), p.285304 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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9 |
Material Type: Artigo
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The self-consistent charge density functional tight binding study on wurtzite nanowireTuoc, Vu NgocComputational materials science, 2010-10, Vol.49 (4), p.S161-S169 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Raman scattering study of InAs nanowires under high pressureMajumdar, Dipanwita ; Basu, Abhisek ; Dev Mukherjee, Goutam ; Ercolani, Daniele ; Sorba, Lucia ; Singha, AchintyaNanotechnology, 2014-11, Vol.25 (46), p.465704-465704 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |