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Material Type: Artigo
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A high performance p-channel transistor : β-MOS FETYOH, K ; KOIZUMI, R ; HASHIMOTO, N ; IKEDA, SJapanese Journal of Applied Physics, 1996, Vol.35 (2B), p.906-909 [Periódico revisado por pares]Tokyo: Japanese journal of applied physicsTexto completo disponível |