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Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates
Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates
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Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates

Reuters, B. ; Strate, J. ; Hahn, H. ; Finken, M. ; Wille, A. ; Heuken, M. ; Kalisch, H. ; Vescan, A.

Journal of crystal growth, 2014-04, Vol.391, p.33-40 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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2
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates
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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates

MAUDER, C ; REUTERS, B ; HEUKEN, M ; KALISCH, H ; JANSEN, R. H ; WANG, K. R ; FAHLE, D ; TRAMPERT, A ; RZHEUTSKII, M. V ; LUTSENKO, E. V ; YABLONSKII, G. P ; WOITOK, J. F ; CHOU, M. M. C

Journal of crystal growth, 2011-01, Vol.315 (1), p.246-249 [Periódico revisado por pares]

Amsterdam: Elsevier

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3
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates
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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

MAUDER, C ; REUTERS, B ; RAHIMZADEH KHOSHROO, L ; RZHEUTSKII, M. V ; LUTSENKO, E. V ; YABLONSKII, G. P ; WOITOK, J. F ; HEUKEN, M ; KALISCH, H ; JANSEN, R. H

Journal of crystal growth, 2010-05, Vol.312 (11), p.1823-1827 [Periódico revisado por pares]

Amsterdam: Elsevier

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4
Optical and structural properties of GaN epitaxial layers on LiAlO sub(2) substrates and their correlation with basal-plane stacking faults
Optical and structural properties of GaN epitaxial layers on LiAlO sub(2) substrates and their correlation with basal-plane stacking faults
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Optical and structural properties of GaN epitaxial layers on LiAlO sub(2) substrates and their correlation with basal-plane stacking faults

Lutsenko, E V ; Rzheutski, M V ; Pavlovskii, V N ; Yablonskii, G P ; Alanzi, M ; Hamidalddin, A ; Alyamani, A ; Mauder, C ; Kalisch, H ; Reuters, B ; Heuken, M ; Vescan, A ; Naresh-Kumar, G ; Trager-Cowan, C

Journal of crystal growth, 2016-01, Vol.434, p.62-66 [Periódico revisado por pares]

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5
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults
Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults
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Optical and structural properties of GaN epitaxial layers on LiAlO2 substrates and their correlation with basal-plane stacking faults

Lutsenko, E.V. ; Rzheutski, M.V. ; Pavlovskii, V.N. ; Yablonskii, G.P. ; Alanzi, M. ; Hamidalddin, A. ; Alyamani, A. ; Mauder, C. ; Kalisch, H. ; Reuters, B. ; Heuken, M. ; Vescan, A. ; Naresh-Kumar, G. ; Trager-Cowan, C.

Journal of crystal growth, 2016-01, Vol.434, p.62-66 [Periódico revisado por pares]

Elsevier B.V

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6
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO 2 substrates
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO 2 substrates
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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO 2 substrates

Mauder, C. ; Reuters, B. ; Wang, K.R. ; Fahle, D. ; Trampert, A. ; Rzheutskii, M.V. ; Lutsenko, E.V. ; Yablonskii, G.P. ; Woitok, J.F. ; Chou, M.M.C. ; Heuken, M. ; Kalisch, H. ; Jansen, R.H.

Journal of crystal growth, 2011, Vol.315 (1), p.246-249 [Periódico revisado por pares]

Elsevier B.V

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7
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO sub( 2) substrates
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO sub( 2) substrates
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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO sub( 2) substrates

Mauder, C ; Reuters, B ; Khoshroo, LRahimzadeh ; Rzheutskii, M V ; Lutsenko, E V ; Yablonskii, G P ; Woitok, J F ; Heuken, M ; Kalisch, H ; Jansen, R H

Journal of crystal growth, 2010-05, Vol.312 (11), p.1823-1827 [Periódico revisado por pares]

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8
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO sub(2 substrates)
Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO sub(2 substrates)
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Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO sub(2 substrates)

Mauder, C ; Reuters, B ; Wang, K R ; Fahle, D ; Trampert, A ; Rzheutskii, M V ; Lutsenko, E V ; Yablonskii, G P ; Woitok, J F ; Chou, MMC ; Heuken, M ; Kalisch, H ; Jansen, R H

Journal of crystal growth, 2011-01, Vol.315 (1), p.246-249 [Periódico revisado por pares]

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9
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO 2 substrates
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO 2 substrates
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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO 2 substrates

Mauder, C. ; Reuters, B. ; Rahimzadeh Khoshroo, L. ; Rzheutskii, M.V. ; Lutsenko, E.V. ; Yablonskii, G.P. ; Woitok, J.F. ; Heuken, M. ; Kalisch, H. ; Jansen, R.H.

Journal of crystal growth, 2010, Vol.312 (11), p.1823-1827 [Periódico revisado por pares]

Elsevier B.V

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10
Growth and characterization of GaN-based structures on SiCOI-engineered substrates
Growth and characterization of GaN-based structures on SiCOI-engineered substrates
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Growth and characterization of GaN-based structures on SiCOI-engineered substrates

Dikme, Y. ; van Gemmern, P. ; Lin, Y.C. ; Szymakowski, A. ; Kalisch, H. ; Faure, B. ; Richtarch, C. ; Larhèche, H. ; Bove, P. ; Letertre, F. ; Woitok, J.F. ; Efthimiadis, K. ; Jansen, R.H. ; Heuken, M.

Journal of crystal growth, 2004-12, Vol.272 (1), p.500-505 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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