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1
In-situ and ex-situ investigation of In segregation in InGaAs layers grown by molecular beam epitaxy on GaAs
In-situ and ex-situ investigation of In segregation in InGaAs layers grown by molecular beam epitaxy on GaAs
Material Type:
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In-situ and ex-situ investigation of In segregation in InGaAs layers grown by molecular beam epitaxy on GaAs

S. Martini (Sandro) A. A Quivy (Alain André); Eduardo Abramof; Encontro Nacional de Física da Matéria Condensada (25. 2002 Caxambú)

Resumos São Paulo, 2002

São Paulo SBF 2002

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2
Anti-cruzamento das sub-bandas de buracos em poços quânticos de GaAs/AlGaAs sob pressão biaxial
Anti-cruzamento das sub-bandas de buracos em poços quânticos de GaAs/AlGaAs sob pressão biaxial
Material Type:
Conference Paper 		Add to e-Shelf

Anti-cruzamento das sub-bandas de buracos em poços quânticos de GaAs/AlGaAs sob pressão biaxial

Paulo F Gomes M P F Godoy; M K K Nakaema; F Ikawa; T E Lamas; A. A Quivy (Alain André); Encontro Nacional de Física da Matéria Condensada 26 (2003 Caxambu)

Resumos São Paulo : SBF, 2003

São Paulo SBF 2003

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3
p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant
p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant
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p-type doping of GaAs(001) layers grown by droplet-assisted MBE using silicon as a dopant

T. E. Lamas (Tomás Erikson) A. A Quivy (Alain André); Encontro Nacional de Física da Matéria Condensada (25. 2002 Caxambú)

Resumos São Paulo, 2002

São Paulo SBF 2002

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4
Sistema computacional de controle de um experimento de fotoluminescencia (pl) e fotoluminescencia de excitacao (ple)
Sistema computacional de controle de um experimento de fotoluminescencia (pl) e fotoluminescencia de excitacao (ple)
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Sistema computacional de controle de um experimento de fotoluminescencia (pl) e fotoluminescencia de excitacao (ple)

E A M Machado A. A Quivy (Alain André); Simpósio de Iniciação Científica da Universidade de São Paulo (3. 1995 São Carlos)

São Paulo : USP, 1995 Resumos

Sao Paulo Usp 1995

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5
Microscopio de tonelamento operando no ar
Microscopio de tonelamento operando no ar
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Microscopio de tonelamento operando no ar

J A Carvalho A S Ferlauto; R L Iope; E A M Machado; A. A Quivy (Alain André); Simpósio de Iniciação Científica da Universidade de São Paulo (3. 1995 São Carlos)

São Paulo : USP, 1996 Resumos

São Paulo Usp 1996

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6
New method for studying semiconducting surfaces in air by scanning tunneling microscopy
New method for studying semiconducting surfaces in air by scanning tunneling microscopy
Material Type:
Article 		Add to e-Shelf

New method for studying semiconducting surfaces in air by scanning tunneling microscopy

A S Ferlauto A. A Quivy (Alain André)

Modern Physics Letters B v. 10, n. 24, p. 1189-1195, 1997

1997

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7
Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers
Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers
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Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers

M J da Silva A. A Quivy (Alain André)

Brazilian Journal of Physics São Paulo v. 32, 2A, 290-292, 2002

São Paulo 2002

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8
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
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Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs

R R O Morais I F L Dias; J L Duarte; E Laureto; S A Lourenço; Euzi Conceição Fernandes da Silva; A. A Quivy (Alain André)

Brazilian Journal of Physics v. 40, n. 1, p. 15-21, 2010

São Paulo 2010

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9
Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots
Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots
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Dispersion of electron g-factor with optical transition energy in ('IN','GA')'AS'/ 'GA''AS' self-assembled quantum dots

A Schwan B M Meiners; S Spatzek; S Varwig; D R Yakovlev; M Bayer; A B Henriques; A A Quivy; A D B Maia

APPLIED PHYSICS LETTERS Woodbury v.98, n.23, p. 233102, jun.2011

Woodbury 2011

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10
Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100)
Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100)
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Investigation of interdot carrier transfer in vertically stacked self-assembled InAs/GaAs double-quantum-dots grown on GaAs (100)

Sidney Alves Lourenço Luiz Carlos Poças; Joyce Marquini Lopes; Edson Laureto; José Leonil Duarte; Ivan Frederico Lupiano Dias; A A Quivy; Brazilian Workshop on Semiconductor Physics (15. 2011 Juiz de Fora)

Resumo Juiz de Fora: UFJF, 2011

Juiz de Fora UFJF 2011

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