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Structure and formation process of the glass film on grain-oriented silicon steel using aluminum nitride as an inhibitor
Structure and formation process of the glass film on grain-oriented silicon steel using aluminum nitride as an inhibitor
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Structure and formation process of the glass film on grain-oriented silicon steel using aluminum nitride as an inhibitor

Fujii, Hiroyasu ; Yamazaki, Shuichi ; Masui, Hiroaki ; Shiozaki, Morio ; Nagashima, Takeo ; Kobayashi, Hisashi

Journal of applied physics, 1999-04, Vol.85 (8), p.6016-6018 [Periódico revisado por pares]

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2
Coherent emission from Ho3+ ions by pumping into the YIG absorption band
Coherent emission from Ho3+ ions by pumping into the YIG absorption band
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Coherent emission from Ho3+ ions by pumping into the YIG absorption band

Stafford, R. G. ; Masui, H. ; Farrow, R. L. ; Chang, R. K. ; van Uitert, L. G.

Journal of applied physics, 1976-06, Vol.47 (6), p.2483-2485 [Periódico revisado por pares]

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3
Nonresonant Energy Transfer from Er3+ to Yb3+ in LaF3
Nonresonant Energy Transfer from Er3+ to Yb3+ in LaF3
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Nonresonant Energy Transfer from Er3+ to Yb3+ in LaF3

Okamoto, Eichi ; Masui, Hiromitsu ; Muto, Katsutoshi ; Awazu, Kenzo

Journal of applied physics, 1972-05, Vol.43 (5), p.2122-2123 [Periódico revisado por pares]

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4
Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping
Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping
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Modeling and interpretation of UV and blue luminescence intensity in β-Ga2O3 by silicon and nitrogen doping

Onuma, T. ; Nakata, Y. ; Sasaki, K. ; Masui, T. ; Yamaguchi, T. ; Honda, T. ; Kuramata, A. ; Yamakoshi, S. ; Higashiwaki, M.

Journal of applied physics, 2018-08, Vol.124 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping
Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping
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Enhanced nucleation of oxide precipitates during Czochralski silicon crystal growth with nitrogen doping

Aihara, K. ; Takeno, H. ; Hayamizu, Y. ; Tamatsuka, M. ; Masui, T.

Journal of applied physics, 2000-09, Vol.88 (6), p.3705-3707 [Periódico revisado por pares]

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6
Effects of magnetic field configuration on thrust performance in a miniature microwave discharge ion thruster
Effects of magnetic field configuration on thrust performance in a miniature microwave discharge ion thruster
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Effects of magnetic field configuration on thrust performance in a miniature microwave discharge ion thruster

Yamamoto, Naoji ; Kondo, Shinya ; Chikaoka, Takayuki ; Nakashima, Hideki ; Masui, Hirokazu

Journal of applied physics, 2007-12, Vol.102 (12) [Periódico revisado por pares]

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7
Effects of magnetic field configuration on thrust performancein a miniature microwave discharge ion thruster
Effects of magnetic field configuration on thrust performancein a miniature microwave discharge ion thruster
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Effects of magnetic field configuration on thrust performancein a miniature microwave discharge ion thruster

Yamamoto, Naoji ; Kondo, Shinya ; Chikaoka, Takayuki ; Nakashima, Hideki ; Masui, Hirokazu

Journal of applied physics, 2007-12, Vol.102 (12), p.123304-123304-6 [Periódico revisado por pares]

American Institute of Physics

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8
Light-polarization characteristics of electroluminescence from In Ga N ∕ Ga N light-emitting diodes prepared on ( 11 2 ¯ 2 ) -plane GaN
Light-polarization characteristics of electroluminescence from In Ga N ∕ Ga N light-emitting diodes prepared on ( 11 2 ¯ 2 ) -plane GaN
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Light-polarization characteristics of electroluminescence from In Ga N ∕ Ga N light-emitting diodes prepared on ( 11 2 ¯ 2 ) -plane GaN

Masui, Hisashi ; Baker, Troy J ; Iza, Michael ; Zhong, Hong ; Nakamura, Shuji ; DenBaars, Steven P

Journal of applied physics, 2006-12, Vol.100 (11), p.113109-113109-5 [Periódico revisado por pares]

American Institute of Physics

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9
Influence of heat treatments in H 2 and Ar on the E1 center in β-Ga2O3
Influence of heat treatments in H 2 and Ar on the E1 center in β-Ga2O3
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Influence of heat treatments in H 2 and Ar on the E1 center in β-Ga2O3

Langørgen, Amanda ; Zimmermann, Christian ; Kalmann Frodason, Ymir ; Førdestrøm Verhoeven, Espen ; Michael Weiser, Philip ; Michael Karsthof, Robert ; Basile Varley, Joel ; Vines, Lasse

Journal of applied physics, 2022-03, Vol.131 (11) [Periódico revisado por pares]

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10
Electronic properties of the residual donor in unintentionally doped β-Ga2O3
Electronic properties of the residual donor in unintentionally doped β-Ga2O3
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Electronic properties of the residual donor in unintentionally doped β-Ga2O3

Son, N. T. ; Goto, K. ; Nomura, K. ; Thieu, Q. T. ; Togashi, R. ; Murakami, H. ; Kumagai, Y. ; Kuramata, A. ; Higashiwaki, M. ; Koukitu, A. ; Yamakoshi, S. ; Monemar, B. ; Janzén, E.

Journal of applied physics, 2016-12, Vol.120 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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