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Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
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Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

Sharma, R. ; Pattison, P. M. ; Masui, H. ; Farrell, R. M. ; Baker, T. J. ; Haskell, B. A. ; Wu, F. ; DenBaars, S. P. ; Speck, J. S. ; Nakamura, S.

Applied physics letters, 2005-12, Vol.87 (23) [Periódico revisado por pares]

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2
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
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Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates

Koyama, T. ; Onuma, T. ; Masui, H. ; Chakraborty, A. ; Haskell, B. A. ; Keller, S. ; Mishra, U. K. ; Speck, J. S. ; Nakamura, S. ; DenBaars, S. P. ; Sota, T. ; Chichibu, S. F.

Applied physics letters, 2006-08, Vol.89 (9) [Periódico revisado por pares]

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3
Growth and characterization of bulk InGaN films and quantum wells
Growth and characterization of bulk InGaN films and quantum wells
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Growth and characterization of bulk InGaN films and quantum wells

Keller, S. ; Keller, B. P. ; Kapolnek, D. ; Abare, A. C. ; Masui, H. ; Coldren, L. A. ; Mishra, U. K. ; Den Baars, S. P.

Applied physics letters, 1996-05, Vol.68 (22), p.3147-3149 [Periódico revisado por pares]

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4
Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances
Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances
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Interdigitated multipixel arrays for the fabrication of high-power light-emitting diodes with very low series resistances

Chakraborty, Arpan ; Shen, L. ; Masui, H. ; DenBaars, S. P. ; Mishra, U. K.

Applied physics letters, 2006-05, Vol.88 (18) [Periódico revisado por pares]

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5
Interdigitated multipixel arrays for the fabrication of high-powerlight-emitting diodes with very low series resistances
Interdigitated multipixel arrays for the fabrication of high-powerlight-emitting diodes with very low series resistances
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Interdigitated multipixel arrays for the fabrication of high-powerlight-emitting diodes with very low series resistances

Chakraborty, Arpan ; Shen, L ; Masui, H ; DenBaars, S P ; Mishra, U K

Applied physics letters, 2006-05, Vol.88 (18), p.181120-181120-3 [Periódico revisado por pares]

American Institute of Physics

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6
Prospective emission efficiency and in-plane light polarizationof nonpolar m -plane In x Ga 1 − x N ∕ Ga N blue light emitting diodesfabricated on freestanding GaN substrates
Prospective emission efficiency and in-plane light polarizationof nonpolar m -plane In x Ga 1 − x N ∕ Ga N blue light emitting diodesfabricated on freestanding GaN substrates
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Prospective emission efficiency and in-plane light polarizationof nonpolar m -plane In x Ga 1 − x N ∕ Ga N blue light emitting diodesfabricated on freestanding GaN substrates

Koyama, T ; Onuma, T ; Masui, H ; Chakraborty, A ; Haskell, B A ; Keller, S ; Mishra, U K ; Speck, J S ; Nakamura, S ; DenBaars, S P ; Sota, T ; Chichibu, S F

Applied physics letters, 2006-08, Vol.89 (9), p.091906-091906-3 [Periódico revisado por pares]

American Institute of Physics

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7
Demonstration of a semipolar ( 10 1 ¯ 3 ¯ ) In Ga N ∕ Ga N green light emitting diode
Demonstration of a semipolar ( 10 1 ¯ 3 ¯ ) In Ga N ∕ Ga N green light emitting diode
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Demonstration of a semipolar ( 10 1 ¯ 3 ¯ ) In Ga N ∕ Ga N green light emitting diode

Sharma, R ; Pattison, P M ; Masui, H ; Farrell, R M ; Baker, T J ; Haskell, B A ; Wu, F ; DenBaars, S P ; Speck, J S ; Nakamura, S

Applied physics letters, 2005-11, Vol.87 (23), p.231110-231110-3 [Periódico revisado por pares]

American Institute of Physics

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8
Nonresonant Energy Transfer from Er3+ to Yb3+ in LaF3
Nonresonant Energy Transfer from Er3+ to Yb3+ in LaF3
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Nonresonant Energy Transfer from Er3+ to Yb3+ in LaF3

Okamoto, Eichi ; Masui, Hiromitsu ; Muto, Katsutoshi ; Awazu, Kenzo

Applied physics letters, 1972-04, Vol.20 (8), p.299-301 [Periódico revisado por pares]

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9
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
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Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Higashiwaki, Masataka ; Sasaki, Kohei ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu

Applied physics letters, 2012-01, Vol.100 (1) [Periódico revisado por pares]

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10
Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals
Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals
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Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals

Onuma, T. ; Saito, S. ; Sasaki, K. ; Goto, K. ; Masui, T. ; Yamaguchi, T. ; Honda, T. ; Kuramata, A. ; Higashiwaki, M.

Applied physics letters, 2016-03, Vol.108 (10) [Periódico revisado por pares]

Melville: American Institute of Physics

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