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Refinado por: data de publicação: Antes de1984 remover data de publicação: 1982Até1995 remover
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1
Growth of III–V semiconductors by molecular beam epitaxy and their properties
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Growth of III–V semiconductors by molecular beam epitaxy and their properties

Cho, A.Y.

Thin solid films, 1983-02, Vol.100 (4), p.291-317 [Periódico revisado por pares]

Elsevier B.V

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2
Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N - n heterojunction by C - V profiling
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Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N - n heterojunction by C - V profiling

People, R. ; Wecht, K. W. ; Alavi, K. ; Cho, A. Y.

Applied physics letters, 1983-07, Vol.43 (1), p.118-120 [Periódico revisado por pares]

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3
Characteristics of Schottky diodes with microcluster interface
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Characteristics of Schottky diodes with microcluster interface

SCHNEIDER, M. V ; CHO, A. Y ; KOLLBERG, E ; ZIRATH, H

Applied physics letters, 1983-09, Vol.43 (6), p.558-560 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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4
Photoconductivity effects in extremely high mobility modulation-doped (Al,Ga)As/GaAs heterostructures
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Photoconductivity effects in extremely high mobility modulation-doped (Al,Ga)As/GaAs heterostructures

Drummond, T. J. ; Kopp, W. ; Fischer, R. ; Morkoç, H. ; Thorne, R. E. ; Cho, A. Y.

Journal of applied physics, 1982-01, Vol.53 (2), p.1238-1240 [Periódico revisado por pares]

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5
Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures
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Incorporation rates of gallium and aluminum on GaAs during molecular beam epitaxy at high substrate temperatures

Fischer, R. ; Klem, J. ; Drummond, T. J. ; Thorne, R. E. ; Kopp, W. ; Morkoç, H. ; Cho, A. Y.

Journal of applied physics, 1983-05, Vol.54 (5), p.2508-2510 [Periódico revisado por pares]

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6
Two-dimensional electron gas at a molecular beam epitaxial-grown, selectively doped, In0.53Ga0.47As-In0.48Al0.52As interface
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Two-dimensional electron gas at a molecular beam epitaxial-grown, selectively doped, In0.53Ga0.47As-In0.48Al0.52As interface

Kastalsky, A. ; Dingle, R. ; Cheng, K. Y. ; Cho, A. Y.

Applied physics letters, , Vol.41 (3), p.274-277 [Periódico revisado por pares]

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7
Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxy
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Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxy

Cheng, K. Y. ; Cho, A. Y.

Journal of applied physics, , Vol.53 (6), p.4411-4415 [Periódico revisado por pares]

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8
Characterization of high purity GaAs grown by molecular beam epitaxy
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Characterization of high purity GaAs grown by molecular beam epitaxy

Dingle, R. ; Weisbuch, C. ; Störmer, H. L. ; Morkoç, H. ; Cho, A. Y.

Applied physics letters, 1982-01, Vol.40 (6), p.507-510 [Periódico revisado por pares]

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9
N-oxidation of phentermine to N-hydroxyphentermine by a reconstituted cytochrome P-450 oxidase system from rabbit liver
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N-oxidation of phentermine to N-hydroxyphentermine by a reconstituted cytochrome P-450 oxidase system from rabbit liver

Duncan, J D ; Cho, A K

Molecular pharmacology, 1982-09, Vol.22 (2), p.235-238 [Periódico revisado por pares]

United States: American Society for Pharmacology and Experimental Therapeutics

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10
Inhibition of [3H]norepinephrine uptake in organ cultured rat superior cervical ganglia by xylamine
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Inhibition of [3H]norepinephrine uptake in organ cultured rat superior cervical ganglia by xylamine

Fischer, J B ; Cho, A K

The Journal of pharmacology and experimental therapeutics, 1982-01, Vol.220 (1), p.115-119 [Periódico revisado por pares]

United States: American Society for Pharmacology and Experimental Therapeutics

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