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Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction
Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction
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Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

Shida, K. ; Takeuchi, S. ; Tohei, T. ; Miyake, H. ; Hiramatsu, K. ; Sumitani, K. ; Imai, Y. ; Kimura, S. ; Sakai, A.

Journal of applied physics, 2018-04, Vol.123 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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2
Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants — With results for AlN optical constants
Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants — With results for AlN optical constants
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Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants — With results for AlN optical constants

Saito, T. ; Ozaki, K. ; Fukui, K. ; Iwai, H. ; Yamamoto, K. ; Miyake, H. ; Hiramatsu, K.

Thin solid films, 2014-11, Vol.571, p.517-521 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy
Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy
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Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy

Chichibu, S F ; Miyake, H ; Ishikawa, Y ; Furusawa, K ; Hiramatsu, K

Applied physics letters, 2015-09, Vol.107 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy
Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy
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Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

Chichibu, S. F. ; Miyake, H. ; Ishikawa, Y. ; Tashiro, M. ; Ohtomo, T. ; Furusawa, K. ; Hazu, K. ; Hiramatsu, K. ; Uedono, A.

Journal of applied physics, 2013-06, Vol.113 (21) [Periódico revisado por pares]

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Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams
Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams
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Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams

Uedono, A ; Tenjinbayashi, K ; Tsutsui, T ; Shimahara, Y ; Miyake, H ; Hiramatsu, K ; Oshima, N ; Suzuki, R ; Ishibashi, S

Journal of applied physics, 2012-01, Vol.111 (1), p.013512-013512-5 [Periódico revisado por pares]

American Institute of Physics

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6
Analysis of deep levels in n -type GaN by transient capacitance methods
Analysis of deep levels in n -type GaN by transient capacitance methods
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Analysis of deep levels in n -type GaN by transient capacitance methods

Hacke, P. ; Detchprohm, T. ; Hiramatsu, K. ; Sawaki, N. ; Tadatomo, K. ; Miyake, K.

Journal of applied physics, 1994-07, Vol.76 (1), p.304-309 [Periódico revisado por pares]

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7
Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers
Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers
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Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers

Fang, H. ; Katagiri, M. ; Miyake, H. ; Hiramatsu, K. ; Oku, H. ; Asamura, H. ; Kawamura, K.

Journal of applied physics, 2014-02, Vol.115 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes
Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes
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Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes

Chen, Z T ; Sakai, Y ; Zhang, J C ; Egawa, T ; Wu, J J ; Miyake, H ; Hiramatsu, K

Applied physics letters, 2009-08, Vol.95 (8), p.083504-083504-3 [Periódico revisado por pares]

American Institute of Physics

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9
Interaction of the dual effects triggered by AlN interlayers in thick GaN grown on 3C-SiC/Si substrates
Interaction of the dual effects triggered by AlN interlayers in thick GaN grown on 3C-SiC/Si substrates
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Interaction of the dual effects triggered by AlN interlayers in thick GaN grown on 3C-SiC/Si substrates

Fang, H ; Takaya, Y ; Miyake, H ; Hiramatsu, K ; Asamura, H ; Kawamura, K

Journal of physics. D, Applied physics, 2012-09, Vol.45 (38), p.385101-1-4 [Periódico revisado por pares]

IOP Publishing

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10
Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer
Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer
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Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer

Fang, H. ; Katagiri, M. ; Miyake, H. ; Hiramatsu, K. ; Oku, H. ; Asamura, H. ; Kawamura, K.

Physica status solidi. A, Applications and materials science, 2014-04, Vol.211 (4), p.744-747 [Periódico revisado por pares]

Weinheim: Blackwell Publishing Ltd

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